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nvSRAM (Nonvolatile SRAM) | Cypress Semiconductor

nvSRAM (Nonvolatile SRAM)


Architecture of Cypress’s Parallel nvSRAM with SONOS technology

Nonvolatile SRAM (nvSRAM) combines Cypress' industry leading SRAM technology with best-in-class SONOS nonvolatile technology. Under normal operation, nvSRAM behaves like a conventional asynchronous SRAM using standard signals and timing. nvSRAM performs parallel random access reads and writes as fast as 20 ns.

On a power failure, nvSRAM automatically saves a copy of the SRAM data into nonvolatile memory, where the data is protected for over 20 years. The transfer between SRAM and nonvolatile memory is completely parallel, allowing the operation to complete in 8 ms or less, without any user intervention. On power-up, nvSRAM returns the data back to the SRAM and system operation continues from where it left off. nvSRAM also provides user controlled software STORE and RECALL initiation commands, as well as a user controlled hardware STORE command in most versions.

Cypress' nvSRAMs are offered in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages.


Cypress nvSRAM Key Features

  • 64 Kb to 16 Mb devices

  • Asynchronous parallel and ONFI 1.0 interface options

  • Serial interface options

  • As low as 20 ns access times

  • Infinite endurance

  • No batteries required to store data on power loss; RoHS compliant

  • Optional Real Time Clock (RTC)

nvSRAM Technology

Cypress nvSRAM's nonvolatile cells are based on SONOS technology. They take advantage of Fowler-Nordheim Tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN Tunneling is that it results in vastly higher NV endurance and much slower wear out. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels.

Cypress nvSRAM's nonvolatile cells are based on SONOS technology for its ease of integration in CMOS(only two additional masks).

Learn about Infineon Products

Cypress’s parallel nvSRAM products are the industry’s fastest parallel nonvolatile RAM solutions with access times as low as 20 ns. They provide unlimited read/write endurance, 1 million STORE cycles on power-loss and an optional Real-Time Clock (RTC). Parallel nvSRAM uses an external Vcap capacitor to complete nonvolatile data transfer on power loss. Unlike battery-backed SRAM (BBSRAM)-based designs, parallel nvSRAM does not require batteries to store data on power loss, which improves reliability while saving cost and board space. Cypress’s parallel nvSRAM products are used in many applications including RAID storage, industrial automation, computing and networking, avionics and defense and electronic gaming systems.

Cypress’s serial nvSRAM products provide infinite read/write endurance, 1 million STORE cycles on power loss, high speed reads and writes, nonvolatile data retention and an optional Real Time Clock (RTC). Serial nvSRAM is an excellent alternative to EEPROM which suffers from a 1 million write cycle limitation and may require wear leveling and increased memory capacity to support a product over its lifespan. nvSRAM uses an external Vcap capacitor to complete nonvolatile data transfer on power loss. Cypress’s serial nvSRAM products are ideal for mission-critical applications including industrial control and automation equipment and smart meters. 


Attribute Parallel nvSRAM Features Serial nvSRAM Features
Product Selector Guide
Density 64Kb - 16Mb 64Kb - 1Mb
Organization 32K x 8
64K x 16
128K x 8
256K x 16
512K x 8
512K x 16
512K x 32
1M x 8
1M x 16
2M x 8
8K x 8
32K x 8
128K x 8
Access Time 20 ns
25 ns
45 ns
Interface x 8
x 16
x 32
Max Frequency - Up to 108 MHz (QSPI)
Up to 40 MHz (SPI)
Up to 3.4 MHz (I2C)
Voltage Range 2.7 – 3.6 V
3.0 – 3.6 V
4.5 – 5.5 V
2.7 – 3.6 V
4.5 – 5.5 V
I/O Voltage Range 1.65 – 1.95 V
1.7 – 1.95 V
2.7 – 3.6 V
4.5 – 5.5 V
1.71 - 2.0 V
2.7 - 3.6 V
Temperature Range -40˚C to +85˚C
-55˚C to +125˚C (Military)
-40˚C to +85˚C
-40˚C to +105˚C
Package 32 SOIC
165 FBGA
28 LLC (Military)
CY14NVSRAMKIT-001: Cypress' nvSRAM Development Kit


Cypress' nvSRAM Development Kit

CY14NVSRAMKIT-001 is an easy-to-use and inexpensive nonvolatile SRAM (nvSRAM) development kit for Cypress’s high-performance and high-reliability parallel nvSRAM devices. The nvSRAM is a 16-Mbit high performance SRAM that is backed by Cypress’s Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile technology making it the ideal replacement for battery-backed SRAM (BBSRAM), MRAM, and other in high-performance applications.

nvSRAM Applications

RAID Controller Cards
    Programmable Logic Controllers (PLCs)
      Network Routers
        Electronic Gaming Machines
          Vendor OS Software Download
          Cypress - CY14NVSRAMKIT-001: Cypress’s nvSRAM Development Kit Example Project