You are here

Asynchronous SRAM | Cypress Semiconductor

Asynchronous SRAM

Asynchronous Static Random-Access Memory (Async SRAMs)

4Mb Fast asynchronous SRAM

 

Async SRAM is a type of Volatile random-access memory (RAM) that uses flip-flop based latching circuitry to store each bit. The data bits are retained in memory as long as power is supplied. Infineon provides the Industry’s broadest portfolio of Asynchronous SRAMs from 256K to 64M. Async SRAMs are used in Networking, Defence and Industrial applications due to its High reliability and Long Term Support offered. MoBL Asynchronous SRAMs are also ideal for battery powered and battery-backed solutions (BBSRAM) across a range of application segments that require data backup on power loss.

Infineon’s Async SRAMs are RoHS compliant, QML certified for Defence products and available in industry standard TSOP. BGA, SOP packages

I2C | SPI | QSPI | Parallel (x8, x16, x32)

  • 256K
  • 512K
  • 1M
  • 2M
  • 4M
  • 8M
  • 16M
  • 32M
  • 64M
  • Infineon’s MoBL® SRAMs are used in high performance, battery powered and battery-backed Implantable medical devices.
  • In Multi function printers (MFP) ,user tool settings, network settings, and configuration data is stored in a dedicated MoBL® SRAM for its high reliability and low error rates.
  • Infineon provides Military grade Async SRAM used in defence applications
  • Async SRAM are used in networking devise such as Router. Router designs use SRAM in a battery backed configuration for permanent storage of startup configuration
  • Infineon’s Async SRAM are used in Industrial PLC’s for backup of critical tool position because of its Lowest Soft error rate of <0.1 FIT/Mbit

Fast access

Fast access

Fastest access time as lows as 10ns

Low power consumption

Low power consumption

Powersnooze™ option for energy efficient operation

High reliability

High reliability

On-Chip ECC to provide lowest Soft error rate < 0.1FIT/Mbit

Long term support

Long term support

Legacy parts support of Up to 20 years

 

What is Async SRAM?

SRAMs come in two different flavors: Synchronous and Asynchronous. Synchronous SRAMs are devices that are synchronized with an external signal called a clock. The device will read and write information into the memory only on particular states of the clock. An asynchronous SRAM, on the other hand, does not depend on the state of a clock. It will begin to read or write information into the memory as soon as it receives the instruction to do so. Click here to know more about Infineon’s Synchronous SRAM products.

Infineon’s Async SRAM Memory Family

Infineon offers a comprehensive portfolio of parallel Async SRAMs.

Our Async FAST SRAMs are industry’s fastest parallel Async SRAM solutions with fastest access time of 10ns. These are available in densities ranging from 256kbit – 32Mbit supports wide voltage range from 1.8V to 5V. These are used in applications such as networking applications such as switches and routers.

Our Async Micropower (MoBL®) SRAMs are most energy efficient Async SRAM solutions with Powersnooze™ mode. These are available in densities ranging from 64kbit – 16Mbit supports wide voltage range from 1.8V to 5V. These are used in battery powered and battery-backed solutions.

Async SRAM with Powersnooze™

Infineon’s Asynchronous SRAM memories combine the access time of Fast Asynchronous SRAM with a unique ultra-low-power sleep mode into one chip through the Powersnooze™ feature. This feature lets SRAMs to operate at fast speeds of 10ns (100 MHz), while consuming < 2 µA / Mbit (typ.) of sleep current. By invoking this “deep sleep” feature, SRAM’s quickly transition from a high-speed active state to a power saving sleep state. This ensures that the full power of your MCU to be harnessed, since the SRAM is no longer the limitation to achieving your peak performance. Read this Application Note to learn more about the Powersnooze™ feature.

Block diagram of Async Fast SRAM with Powersnooze™ option

Async SRAM with Error Correcting code

Systems running mission-critical applications need memories with zero system errors. Higher energy extra-terrestrial radiations such as Alpha particles, thermal neutrons, Cosmic rays can flip multiple adjacent bits, leading to multi-bit errors.

Our Asynchronous SRAMs use (38,32) hamming code ECC for single-bit error detection and correction and performs all ECC related functions in line, without user intervention. SRAMs with ECC are form-fit-function compatible with older generation Asynchronous SRAMs. This allows you to improve system reliability without investing in PCB re-design.

Block diagram Architecture of Async SRAMs with Error correcting code

Multi-bit Interleaving

A Multibit upset is a type of radiation-induced upset identified when two or more flipped bits are physically adjacent or have a separation of, at most, one non-failing bit. Bit-interleave distance separates two consecutive bits mapped to the same word register. In a bit-interleaved memory, a single-bit error correction algorithm can be used to detect and correct all errors. Together, these features provide significant improvement in Soft Error Rate (SER) performance, resulting in industry’s most reliable SRAMs with <0.1 FIT/Mbit.

For details on how to interface Async SRAM with legacy 5V systems, read this Application Note.

Async SRAM in Battery Backed Applications

Battery Backed SRAM's (BBSRAM's), also called NVRAM's are used in applications that require any kind of data backup in the event of a power failure. In these cases, we can use a conventional SRAM memory along with a back-up battery and control circuitry to create a fast, non-volatile memory. Infineon also offers FRAM and nvSRAM non-volatile memories for applications requiring higher endurance and longer retention.

Read this Application Note to understand the design considerations that need to be considered for using Async SRAM in battery backed applications.

Block diagram of Interfacing SRAM with battery for battery backed applications

About Infineon RAM Memory Solutions

With over 3 decades of leadership in the memory business, Infineon offers a broad portfolio of volatile and non-volatile memories. Our volatile memory offerings include Synchronous and Asynchronous SRAMs for the lower densities and HyperRAMs for the higher densities. Our non-volatile portfolio includes F-RAM and nvSRAM products.

Infineon Products

Asynchronous static random access memory (Async SRAM)

Infineon’s asynchronous SRAMs include low power More Batter Life (MoBL®) micropower SRAMs and Fast SRAMs. Also included are products with on chip Error Correction Code (ECC). Learn More.

Fast Async SRAMs
Fastest access time of 10ns
Density:
256Kb – 32Mb
Operating Voltage:
1.8V, 3V, 5V
Data width:
x8, x16, x32
Access time:
10, 15ns
Temperature Grade:

Industrial

Commercial

Automotive

Micropower Async SRAMs
More Battery Life
Density:
256Kb – 64Mb
Operating Voltage:
1.8V, 3V, 5V
Data width:
x8, x16
Access time:
45 - 55ns
Temperature Grade:

Industrial

Commercial

Automotive

SRAM with ECC
SRAM with On-chip hardware ECC
Density:
4Mb – 16Mb
Operating Voltage:
1.8V, 3V, 5V
Data width:
x8, x16, x32
Access time:
10 - 45ns
Temperature Grade:

Industrial

Commercial

Automotive

Document Type Fast Micropower SRAM with ECC
Product Roadmaps 1 1 1
Application Notes 1 2 2
Datasheets 56 57 24
Models 137 80 3
Other Resources 4   1
Product Brochures 1 1 1
Product Change Notice (PCN) 7 3  
Product Overviews 1   2
Product Termination Notice (PTN) 2    
Qualification Reports 48 43  
Technical Articles 4    
White Papers 1 1  
Knowledge Base Articles 102

Memory for wide variety of applications

Asynchronous SRAMs with ECC are suitable for a wide variety of industrial, medical, commercial, automotive and military applications that require the highest standards of reliability and performance. Fast SRAMs are an ideal choice in networking applications such as switches and routers, IP-phones, test equipment and automotive electronics. MoBL® SRAMs are used in high-performance, battery powered and battery-backed solutions across a range of application segments, like PLCs, Multifunction Printers and Implantable medical devices.

Industrial controllers
    Networking
      Multi-Functional printers