64Mb – 512Mb 1.8V Burst Mode, Simultaneous Read/Write (NS-VS-XS) Flash Memory | Cypress Semiconductor
64Mb – 512Mb 1.8V Burst Mode, Simultaneous Read/Write (NS-VS-XS) Flash Memory
Simultaneous Read/Write, Burst Mode
The Cypress NS, VS and XS Nor Flash memory families are burst mode (up to 108 MHz) Flash devices that are capable of performing simultaneous read and write operations with zero latency on eight or sixteen separate banks.
Multiplexed Parallel Address/Data
Address/Data pin count is reduced by using multiplexed data and address pins. The Cypress VS family operates in ADM mode, while the Cypress NS and XS family operates in AADM mode.
The Cypress NS, VS and XS NOR Flash memory families are available in densities from 64 Mb to 512 Mb. These products use a single VCC of 1.7 V to 1.95 V that makes them ideal for the demanding wireless applications that require higher density, better performance, and lower power consumption.
Title | File Size | Issue Date |
Category: General | ||
S29VS064R/S29XS064R (64 Mb) PCB Routing Recommendation | 837.1 KB | 10/22/2015 |
Category: Manufacturing/Assembly | ||
Dose Minimization During X-ray Inspection of Surface-Mounted Flash ICs | 256.96 KB | 10/20/2015 |
Impact of X-Ray Inspection on Cypress Flash Memory | 524.81 KB | 10/20/2015 |
Category: Migration | ||
Migrate_S29NS-R_to_S29VS-R_AN | 333.1 KB | 11/03/2015 |
Migration from Cypress® S29NS-P to S29VS-R | 380.59 KB | 11/03/2015 |
S29NS-N to S29NS-P Migration: From the NS-N (110 nm) to the NS-P (90 nm) | 539.35 KB | 10/20/2015 |
Category: Performance/Quality | ||
Simultaneous Read/Write versus Erase Suspend/Resume | 297.57 KB | 10/27/2015 |
Related Documentation
Part Number | IBIS | VERILOG |
S29VS-R | S29VS-R_IBIS | S29VS-R_VERILOG |
S29NS512P | S29NS512P_IBIS_64-ball-FBGA | S29NS512P_VERILOG |