1-0704SERMAN | Cypress Semiconductor

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1-0704SERMAN
Status: In Production

1-0704SERMAN

Automotive QualifiedN
Tape & ReelN

Pricing & Inventory Availability

1-9 unit Price* 10-24 unit Price* 25-99 unit Price* 100-249 unit Price* 250-999 unit Price* 1000+ unit Price*
$55.41 $49.42 $45.82 $42.23 $40.73 $38.94
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In Stock 1 164 24-48 hours

Packaging/Ordering

Package Cross Section Drawing
Package Carrier
Bulk
Package Carrier Drawing / Orientation
Standard Pack Quantity
1
Minimum Order Quantity (MOQ)
1
Order Increment
1
Estimated Lead Time (days)
7
HTS Code
None
ECCN Suball
EAR99

Quality and RoHS

Moisture Sensitivity Level (MSL)
Peak Reflow Temp. (°C)
PB Free
N
Lead/Ball Finish

Technical Documents

Application Notes (11)

May 29, 2020
AN94077 provides a detailed overview of the advantages of the 65-nm technology over 90-nm for Cypress®s Sync/NoBL® (No Bus Latency™) family of SRAMs.
May 28, 2020
AN42468 discusses on-die termination (ODT) scheme, implementation, advantages and power calculation for the QDR¿II+ and DDRII+ family of Synchronous SRAMs on the 65-nm technology devices.
May 28, 2020
AN4011 provides an overview of Standard Synchronous, NoBL¿, QDR®-II/II+, QDR-II+ Xtreme, DDR-II/II+, DDR-II+ Xtreme and QDR-IV SRAM's. Cypress currently manufactures several major Synchronous SRAM architectures. The purpose of this application note is to provide a means to determine which architecture is right for a particular application. A brief description of each architecture and comparison by address/data relationships and performance characteristics is also included.
May 28, 2020
AN1090 describes the operation of NoBL™ SRAMs and outlines how it is suitable for networking applications.
May 28, 2020
High speed source synchronous semiconductor devices rely on clock synthesis circuits (DLL - Delay Lock Loop / PLL -Phase Lock Loop) to mitigate on die clock skews. The 72-Mbit RHQDRII¿+ SRAM uses a DLL to ensure output data and echo clocks (Strobe) are edge aligned and de-skewed with respect to the source clock. However, all DLLs/PLLs require a certain number of clock cycles to attain ¿lock¿ during which the device will not reliably operate. This application note discusses the required steps necessary to effectively transition between maximum performance and power saving modes with proper DLL operation.
May 28, 2020
This application note provides an overview of the operation of QDR-II/II+/DDR-II/II+ SRAMs in PLL disabled mode.
May 14, 2020
Cypress Quad Data Rate (QDR®)-II, QDR-II+, DDR-II, and DDR-II+ SRAMs address the high-bandwidth requirements for networking and data storage applications that provide up to 80 Gbps data transfer rate. The purpose of this application note is to assist system designers in using the QDR-II, QDR-II+, DDR-II, and DDR-II+ SRAM devices. It includes guidelines on clocking, termination techniques and reference design for the QDR-II, QDR-II+, DDR-II, and DDR-II+ SRAM devices.
Feb 05, 2018
The advantages of the 65-nm technology QDR® SRAMs over the 90-nm technology QDR® SRAM devices are outlined in this Application Note.
May 04, 2017
AN79938 provides guidelines for designing, manufacturing, and handling Cypress's ball grid array (BGA) packages on printed circuit boards.
Apr 28, 2017
AN4017 gives a basic understanding of the temperature specifications found in Cypress's product datasheets. There are many factors that affect the thermal operation of a device. This application note gives you an understanding of the thermal parameters and temperature specifications of the device. It also online tool for calculating the junction temperature for Synchronous SRAM products.
Nov 23, 2015
The differences between the 65 nm QDR II/DDR II and QDR II+/DDR II+ devices are explained in this Application Note. It also contains guidelines on how to design for both.