The SRAM’s manufactured on the state-of-the-art 65-nm technology are offered with a “Power Snooze” feature – that lets you operate at fast speeds of 10ns (100 MHz), while consuming < 2 uA / Mbit (typ.) of sleep current. By invoking this “deep sleep” feature of these SRAM’s, you can quickly transition from a high speed active state to a power saving sleep state. This feature makes these SRAM’s ideal for battery backed industrial applications and high performance IoT systems, where the emphasis is on completing the task quickly, and with minimal power consumption. This feature allows the full power of your MCU to be harnessed, since the SRAM is no longer the limitation to achieving your peak performance.