F-RAM™, nvSRAM, and MRAM Magnetic Field Immunity | Cypress Semiconductor
F-RAM™, nvSRAM, and MRAM Magnetic Field Immunity
This white paper compares the magnetic field immunity of three classes of nonvolatile memory: ferroelectric random-access memory (F-RAM), nonvolatile static random-access memory (nvSRAM), and magnetoresistive random-access memory (MRAM).
Nonvolatile random-access memory (NVRAM) is memory that provides fast read and write access to any address and retains data when power is disrupted. Ferroelectric random-access memory (F-RAM™), nonvolatile static random-access memory (nvSRAM), and magnetoresistive random-access memory (MRAM) are three NVRAMs that offer faster random access times than conventional nonvolatile memories, such as flash and EEPROM. Many nonvolatile memory applications are exposed to magnetic fields; therefore, nonvolatile memory components used in these applications must be immune to the magnetic field effect to protect critical system data.
|File Title||Language||Size||Last Updated|
|F-RAM, nvSRAM, and MRAM Magnetic Field Immunity.pdf||English||776.8 KB||01/18/2016|
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