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PCN061085 | Cypress Semiconductor


Last Updated: 
May 06, 2020

4M Fast Async SRAM Process Technology Transition from R7FD-3R (0.15 micron) to C9FD-3R (90-nanometer) including Lead-Free (RoHS Compliant) Package Conversion on 44/36 Pin SOJ (Small Outline J-Bend) package, 48 ball BGA (Ball Grid Array) and 44 pin TSOP II (Thin Shrunk Outline Package)

Issue Date: 4/25/2006

Effectivity Date: 5/7/2006