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S70GL02GS, 2Gbit (256Mbytes) 3.0V Flash Memory | Cypress Semiconductor

S70GL02GS, 2Gbit (256Mbytes) 3.0V Flash Memory

Last Updated: 
May 29, 2020
The Cypress S70GL02GS 2-Gigabit MirrorBit® Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology.

Distinctive Characteristics:

  • CMOS 3.0 Volt Core with Versatile I/O™
  • Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see publication S29GL_128S_01GS_00 for full specifications)
  • 65 nm MirrorBit Eclipse™ process technology
  • Single supply (VCC) for read / program / erase (2.7V to 3.6V)
  • Versatile I/O Feature – Wide I/O voltage (VIO): 1.65V to VCC
  • x16 data bus
  • 16-word/32-byte page read buffer
  • 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
  • Sector Erase – Uniform 128-kbyes sectors – S70GL02GS: two thousand forty-eight sectors
  • Suspend and Resume commands for Program and Erase operations