S70GL02GS, 2Gbit (256Mbytes) 3.0V Flash Memory | Cypress Semiconductor
S70GL02GS, 2Gbit (256Mbytes) 3.0V Flash Memory
Last Updated:
May 29, 2020
Version:
*J
The Cypress S70GL02GS 2-Gigabit MirrorBit® Flash memory device is fabricated on 65 nm MirrorBit Eclipse process technology.
Distinctive Characteristics:
- CMOS 3.0 Volt Core with Versatile I/O™
- Two 1024 Megabit (S29GL01GS) in a single 64-ball Fortified-BGA package (see publication S29GL_128S_01GS_00 for full specifications)
- 65 nm MirrorBit Eclipse™ process technology
- Single supply (VCC) for read / program / erase (2.7V to 3.6V)
- Versatile I/O Feature – Wide I/O voltage (VIO): 1.65V to VCC
- x16 data bus
- 16-word/32-byte page read buffer
- 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
- Sector Erase – Uniform 128-kbyes sectors – S70GL02GS: two thousand forty-eight sectors
- Suspend and Resume commands for Program and Erase operations
Related Files
| File Title | Language | Size | Last Updated |
|---|---|---|---|
 S70GL02GS, 2Gbit (256Mbytes) 3.0V Flash Memory Datasheet.pdf |
English | 491.31 KB | 05/28/2020 |