FM24V02A, 256-Kbit (32K × 8) Serial (I2C) F-RAM | Cypress Semiconductor
FM24V02A, 256-Kbit (32K × 8) Serial (I2C) F-RAM
Last Updated:
May 25, 2017
Version:
*I
256-Kbit (32K × 8) Serial (I2C) F-RAM
Features
- 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Fast two-wire serial interface (I2C)
- Up to 3.4-MHz frequency
- Direct hardware replacement for serial EEPROM
- Supports legacy timings for 100 kHz and 400 kHz
- Device ID
- Manufacturer ID and Product ID
- Low power consumption
- 175-μA active current at 100 kHz
- 150-μA standby current
- 8-μA sleep mode current
- Low-voltage operation: VDD = 2.0 V to 3.6 V
- Industrial temperature: –40 °C to +85° C
- 8-pin small outline integrated circuit (SOIC) package
- Restriction of hazardous substances (RoHS) compliant
- For more, see pdf.
Functional Overview
The FM24V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.
Translated documents are for reference only. We recommend that you refer to the English-language version of a document if you are engaged in development of a design.
Related Files
| File Title | Language | Size | Last Updated |
|---|---|---|---|
 FM24V02A, 256 Kbit (32K × 8) Serial (I2C) F RAM Datasheet.pdf |
English | 1 MB | 05/25/2017 |
|
FM24V02A, 256 Kbit (32K × 8) Serial (I2C) F RAM Datasheet (Chinese).pdf |
Chinese | 1.75 MB | 01/05/2017 |