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CY7C4122KV13, CY7C4142KV13: 144-Mbit QDR™-IV XP SRAM | Cypress Semiconductor

CY7C4122KV13, CY7C4142KV13: 144-Mbit QDR™-IV XP SRAM

Last Updated: 
May 03, 2017

144-Mbit QDR™-IV XP SRAM


  • 144-Mbit density (8 M × 18, 4 M × 36)
  • Total Random Transaction Rate of 2132 MT/s
  • Maximum operating frequency of 1066 MHz
  • Read latency of 8.0 clock cycles and write latency of 5.0 clock cycles
  • Eight-bank architecture enables one access per bank per cycle
  • Two-word burst on all accesses
  • Dual independent bidirectional data ports
  • Single address port used to control both data ports
  • Single data rate (SDR) control signaling
  • For more, see pdf


Functional Description

The QDR-IV XP (Xtreme Performance) SRAM is a high-performance memory device optimized to maximize the number of random transactions per second by the use of two independent bidirectional data ports.


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