CY7C4121KV13, CY7C4141KV13: 144-Mbit QDR™-IV HP SRAM | Cypress Semiconductor
CY7C4121KV13, CY7C4141KV13: 144-Mbit QDR™-IV HP SRAM
144-Mbit QDR™-IV HP SRAM
- 144-Mbit density (8 M × 18, 4 M × 36)
- Total Random Transaction Rate of 1334 MT/s
- Maximum operating frequency of 667 MHz
- Read latency of 5.0 clock cycles and write latency of 3.0 clock cycles
- Two-word burst on all accesses
- Dual independent bidirectional data ports
- Single address port used to control both data ports
- Single data rate (SDR) control signaling
- For more, see pdf
The QDR-IV HP (High-Performance) SRAM is a high-performance memory device that has been optimized to maximize the number of random transactions per second by the use of two independent bidirectional data ports.
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Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
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