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CY7C2663KV18, CY7C2665KV18: 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT | Cypress Semiconductor

CY7C2663KV18, CY7C2665KV18: 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT

Last Updated: 
May 30, 2021
Version: 
*R

144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features

  • Separate independent read and write data ports
  • 550-MHz clock for high bandwidth
  • Four-word burst for reducing address bus frequency
  • Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz
  • Available in 2.5-clock cycle latency
  • Two input clocks (K and K) for precise DDR timing
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • Data valid pin (QVLD) to indicate valid data on the output
  • On-die termination (ODT) feature
  • For more, see pdf

Functional Description

The CY7C2663KV18, and CY7C2665KV18 are 1.8 V synchronous pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to  access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. 

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