CY7C1618KV18, CY7C1620KV18: 144-Mbit DDR II SRAM Two-Word Burst Architecture

144-Mbit DDR II SRAM Two-Word Burst Architecture

Features

• 144-Mbit density (8 M × 18, 8 M × 36)
• 333 MHz clock for high bandwidth
• 2-word burst for reducing address bus frequency
• Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
• Two input clocks (K and K) for precise DDR timing
• Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
• Echo clocks (CQ and CQ) simplify data capture in high-speed systems
• Synchronous internally self-timed writes
• DDR II operates with 1.5-cycle read latency when DOFF is asserted high
• For more, see pdf
   

Functional Description

The CY7C1618KV18, and CY7C1620KV18 are 1.8-V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock.