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CY7C1618KV18, CY7C1620KV18: 144-Mbit DDR II SRAM Two-Word Burst Architecture | Cypress Semiconductor

CY7C1618KV18, CY7C1620KV18: 144-Mbit DDR II SRAM Two-Word Burst Architecture

Last Updated: 
Dec 03, 2017
Version: 
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144-Mbit DDR II SRAM Two-Word Burst Architecture

Features

  • 144-Mbit density (8 M × 18, 8 M × 36)
  • 333 MHz clock for high bandwidth
  • 2-word burst for reducing address bus frequency
  • Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
  • Two input clocks (K and K) for precise DDR timing
  • Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
  • Echo clocks (CQ and CQ) simplify data capture in high-speed systems
  • Synchronous internally self-timed writes
  • DDR II operates with 1.5-cycle read latency when DOFF is asserted high
  • For more, see pdf
     

Functional Description

The CY7C1618KV18, and CY7C1620KV18 are 1.8-V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock.

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