CY7C1325H: 4-Mbit (256 K × 18) Flow-Through Sync SRAM | Cypress Semiconductor
CY7C1325H: 4-Mbit (256 K × 18) Flow-Through Sync SRAM
4-Mbit (256 K × 18) Flow-Through Sync SRAM
- 256 K × 18 common I/O
- 3.3 V core power supply (VDD)
- 2.5 V or 3.3 V I/O power supply (VDDQ)
- Fast clock-to-output times
- 6.5 ns (133 MHz version)
- Provide high performance 2-1-1-1 access rate
- User selectable burst counter supporting Intel Pentium interleaved or linear burst sequences
- For more, see pdf
The CY7C1325H is a 256 K × 18 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2 bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK).
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