CY7C1318KV18, CY7C1320KV18: 18-Mbit DDR II SRAM Two-Word Burst Architecture | Cypress Semiconductor
CY7C1318KV18, CY7C1320KV18: 18-Mbit DDR II SRAM Two-Word Burst Architecture
Last Updated:
Jan 29, 2018
Version:
*L
18-Mbit DDR II SRAM Two-Word Burst Architecture
Features
- 18-Mbit density (1 M × 18, 512 K × 36)
- 333-MHz clock for high bandwidth
- Two-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
- For More, see pdf.
Functional Description
The CY7C1318KV18, and CY7C1320KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock.