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CY7C1062G, CY7C1062GE: 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC) | Cypress Semiconductor

CY7C1062G, CY7C1062GE: 16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC)

Last Updated: 
Dec 03, 2017
Version: 
*G

16-Mbit (512 K words × 32 bits) Static RAM with Error-Correcting Code (ECC)

Features

  • High speed
    • tAA = 10 ns / 15 ns
  • Embedded error-correcting code (ECC) for single-bit error correction
  • Low active and standby currents
    • ICC = 90 mA maximum
    • ISB2 = 20 mA maximum
  • Operating Voltage Range: 1.65 V to 2.2 V, 2.2 V to 3.6 V
  • 1.0 V data retention
  • Automatic power down when deselected
  • Transistor-transistor logic (TTL) compatible inputs and outputs
  • ERR pin to indicate 1-bit error detection and correction
  • Available in Pb-free 119-ball plastic ball grid array (PBGA) package

Functional Description

CY7C1062G and CY7C1062GE are high-performance CMOS fast static RAM devices with embedded ECC. Both have three chip enables, giving easy memory expansion features. The CY7C1062GE device includes an error indication pin that signals the host processor in the case of a single bit error-detection and correction event.

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