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CY7C10612DV33, 16-MBIT (1M X 16) STATIC RAM | Cypress Semiconductor

CY7C10612DV33, 16-MBIT (1M X 16) STATIC RAM

Last Updated: 
May 26, 2020
Version: 
*E

16-Mbit (1M x 16) Static RAM

Features

  • High speed
    • tAA = 10 ns
  • Low active power
    • ICC = 175 mA at 100 MHz
  • Low CMOS standby power
    • ISB2 = 25 mA
  • Operating voltages of 3.3 ± 0.3V
  • 2.0V data retention
  • Automatic power down when deselected
  • For more, see pdf
     

Functional Description

The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. To write to the device, take Chip Enables (CE) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).