CY7C1049BN: 512 K × 8 Static RAM | Cypress Semiconductor
CY7C1049BN: 512 K × 8 Static RAM
512 K × 8 Static RAM
- High speed
- tAA = 17 ns
- Low active power
- 1073 mW (max.)
- Low CMOS standby power
- 2.75 mW (max.)
- 2.0 V data retention (400 μW at 2.0 V retention)
- Automatic power-down when deselected
- TTL-compatible inputs and outputs
- Easy memory expansion with CE and OE features
- For more, see pdf.
The CY7C1049BN is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).