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CY7C1046D: 4-Mbit (1 M × 4) Static RAM | Cypress Semiconductor

CY7C1046D: 4-Mbit (1 M × 4) Static RAM

Last Updated: 
Aug 25, 2015

4-Mbit (1M x 4) Static RAM


  • Pin- and function-compatible with CY7C1046B
  • High speed
    • tAA = 10 ns
  • CMOS for optimum speed/power
  • Low active power
    • ICC = 90 mA @ 10 ns
  • Low CMOS Standby Power
    • ISB2 = 10 mA
  • Data Retention at 2.0 V
  • Automatic power-down when deselected
  • TTL-compatible inputs and outputs
  • Easy memory expansion with CE and OE features
  • Available in lead-free 400-mil-wide 32-pin SOJ package

Functional Description

The CY7C1046D is a high-performance CMOS static RAM organized as 1M words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the four I/O pins (I/O0 through I/O3) is then written into the location specified on the address pins (A0 through A19).

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