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CY62168DV30 MoBL®: 16-Mbit (2 M × 8) Static RAM | Cypress Semiconductor

CY62168DV30 MoBL®: 16-Mbit (2 M × 8) Static RAM

Last Updated: 
Dec 22, 2015
Version: 
*M

16-Mbit (2 M × 8) Static RAM

Features

  • Very high speed
    • 55 ns
  • Wide voltage range
    • 2.2V – 3.6V
  • Ultra-low active power
    • Typical active current: 2 mA @ f = 1 MHz
    • Typical active current: 15 mA @ f = fMax (55 ns Speed)
  • Ultra-low standby power
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor(CMOS) for optimum speed/power
  • Available in non Pb-free 48-ball very fine ball grid array (VFBGA) package
     

Functional Description

The CY62168DV30 is a high-performance CMOS static RAMs organized as 2048Kbit words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

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