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CY62167EV30 MoBL®: 16-Mbit (1M x 16 / 2M x 8) Static RAM | Cypress Semiconductor

CY62167EV30 MoBL®: 16-Mbit (1M x 16 / 2M x 8) Static RAM

Last Updated: 
Sep 04, 2018
Version: 
*Q

16-Mbit (1M x 16/2M x 8) Static RAM

Features

  • TSOP I package configurable as 1M × 16 or 2M × 8 SRAM
  • Very high speed: 45 ns
  • Temperature ranges
    • Automotive-A: –40 °C to +85 °C
  • Wide voltage range: 2.20 V to 3.60 V
  • Ultra-low standby power
    • Typical standby current: 1.5 μA
    • Maximum standby current: 12 μA
  • Ultra-low active power
    • Typical active current: 2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE Features
  • Automatic power-down when deselected
  • CMOS for optimum speed and power
  • Offered in Pb-free 48-ball VFBGA and 48-pin TSOP I packages

Functional Description

The CY62167EV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits or 2M words by 8 bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).