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CY62167DV30: 16-Mbit (1M x 16) Static RAM | Cypress Semiconductor

CY62167DV30: 16-Mbit (1M x 16) Static RAM

Last Updated: 
Aug 17, 2015
Version: 
*M

16-Mbit (1M x 16) Static RAM

Features

  • Thin small outline package(TSOP I )Configurable as 1M x 16 or as 2M x 8 SRAM
  • Wide voltage range: 2.2V – 3.6V
  • Ultra-low active power: Typical active current: 2 mA at f = 1 MHz
  • Ultra-low standby power
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed / power
  • Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 48-pin TSOP I package

Functional Description

The CY62167DV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

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