CY62158H MoBL®, 8-Mbit (1 M Words × 8 Bits) Static RAM with Error-Correcting Code (ECC) | Cypress Semiconductor
CY62158H MoBL®, 8-Mbit (1 M Words × 8 Bits) Static RAM with Error-Correcting Code (ECC)
CY62158H is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC. Device is accessed by asserting both chip enable inputs – CE1 as LOW and CE2 as HIGH. Write to the device is performed by taking Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and the Write Enable (WE) input LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A19).
Dear valued customer,
Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.
For the full version of this message, please download the PDF version.