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CY62147EV30 MOBL®, 4-Mbit (256K X 16) Static RAM | Cypress Semiconductor

CY62147EV30 MOBL®, 4-Mbit (256K X 16) Static RAM

Last Updated: 
Jul 10, 2020
Version: 
*T

4-Mbit (256 K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40°C to 85°C
  • Wide voltage range: 2.20V to 3.60V
  • Pin compatible with CY62147DV30
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA (Industrial)
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • For more, see pdf

Functional Description
The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.