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CY62147EV18: 4-Mbit (256K x 16) Static RAM | Cypress Semiconductor

CY62147EV18: 4-Mbit (256K x 16) Static RAM

Last Updated: 
Nov 29, 2015

4-Mbit (256K x 16) Static RAM


  • Very high speed: 55 ns
  • Wide voltage range: 1.65 V to 2.25 V
  • Pin compatible with CY62147DV18
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Ultra low standby power
  • For more, see pdf

Functional Description

The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH).

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.