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CY62146EV30 MoBL®: 4-Mbit (256 K x 16) Static RAM | Cypress Semiconductor

CY62146EV30 MoBL®: 4-Mbit (256 K x 16) Static RAM

Last Updated: 
Jul 02, 2020
Version: 
*O

4-Mbit (256 K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40 °C to 85 °C
    • Automotive-A: –40 °C to 85 °C
  • Wide voltage range: 2.20 V to 3.60 V
  • Pin compatible with CY62146DV30
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • For more, see pdf

Functional Description

The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 80 percent when addresses are not toggling.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.