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CY62138F MoBL®: 2-Mbit (256 K × 8) Static RAM | Cypress Semiconductor

CY62138F MoBL®: 2-Mbit (256 K × 8) Static RAM

Last Updated: 
May 28, 2020

2-Mbit (256K x 8) Static RAM


  • High speed: 45 ns
  • Wide voltage range: 4.5 V to 5.5 V
  • Pin compatible with CY62138V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 5 μA
  • Ultra low active power
    • Typical active current: 1.6 mA @ f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power down when deselected
  • complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 32-pin SOIC and 32-pin thin small outline package (TSOP) II packages

Functional Description

The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.