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CY62138EV30 MoBL®: 2-Mbit (256 K × 8) Static RAM | Cypress Semiconductor

CY62138EV30 MoBL®: 2-Mbit (256 K × 8) Static RAM

Last Updated: 
Nov 29, 2015
Version: 
*H

2-Mbit (256K x 8) MoBL® Static RAM

Features

  • Very high speed: 45 ns
    • Wide voltage range: 2.20V to 3.60V
  • Pin compatible with CY62138CV30
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • For more, see pdf
 
Functional Description

The CY62138EV30 is a high performance CMOS static RAM organized as 256K words by eight bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. The device can be put into standby mode reducing power consumption when deselected (CE HIGH).

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.