CY15B104QSN/CY15V104QSN, EXCELON™-ULTRA 4-MBIT (512K X 8) QUAD SPI F-RAM (Preliminary) | Cypress Semiconductor
CY15B104QSN/CY15V104QSN, EXCELON™-ULTRA 4-MBIT (512K X 8) QUAD SPI F-RAM (Preliminary)
Last Updated:
Jun 02, 2020
Version:
*J
The CY15x104QSN is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other nonvolatile memories.
- 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K * 8
- Virtually unlimited endurance of 100 trillion (1014) read/write cycles
- 151-year data retention (See Data Retention and Endurance on page 77)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Single and multi I/O serial peripheral interface (SPI)
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Serial bus interface SPI protocols
- Extended I/O SPI protocols
- Dual SPI (DPI) protocols
- Quad SPI (QPI) protocols
- SPI clock frequency
- Up to 108-MHz frequency SPI Single Data Rate (SDR)
- Up to 54-MHz frequency SPI Double Data Rate (DDR)
- Execute-in-place (XIP)
- Write protection, data security, and data integrity
- Hardware protection using the Write Protect (WP) pin
- Software block protection
- Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity
- ECC detects and corrects 1-bit error. In case 2-bit error occurs, it doesn’t correct but reports through ECC Status register
- CRC detects any accidental change to raw data
- Extended electronic signatures
- Device ID includes manufacturer ID and product ID
- Unique ID
- User writable Serial Number
- Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Content can survive up to three standard reflow cycles
- Low-power consumption at high speed
- 5 mA (typ) active current for 108 MHz SPI SDR
- 13 mA (typ) active current for 108 MHz QSPI SDR and 54 MHz QSPI DDR
- 158 μA (typ) standby current
- 0.75 μA (typ) deep power down mode current
- 0.1 μA (typ) hibernate mode current
- Low-voltage operation:
- CY15V104QSN: VDD = 1.71 V to 1.89 V
- CY15B104QSN: VDD = 1.8 V to 3.6 V
- Operating temperature: -40 ℃ to +85 ℃
- Packages
- 8-pin Small Outline Integrated Circuit (SOIC) package
- 8-pin Grid-Array Quad Flat No-Lead (GQFN) package
- Restriction of hazardous substances (RoHS) compliant
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