CY15B104QSN/CY15V104QSN, EXCELON™-ULTRA 4-MBIT (512K X 8) QUAD SPI F-RAM (Preliminary)

The CY15x104QSN is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other nonvolatile memories.

• 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K * 8
  • Virtually unlimited endurance of 100 trillion (10¹⁴) read/write cycles
  • 151-year data retention (See Data Retention and Endurance on page 77)
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
• Single and multi I/O serial peripheral interface (SPI)
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
  • Serial bus interface SPI protocols
  • Extended I/O SPI protocols
  • Dual SPI (DPI) protocols
  • Quad SPI (QPI) protocols
• SPI clock frequency
  • Up to 108-MHz frequency SPI Single Data Rate (SDR)
  • Up to 54-MHz frequency SPI Double Data Rate (DDR)
• Execute-in-place (XIP)
  • Write protection, data security, and data integrity
  • Hardware protection using the Write Protect (WP) pin
  • Software block protection
• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity
  • ECC detects and corrects 1-bit error. In case 2-bit error occurs, it doesn’t correct but reports through ECC Status register
  • CRC detects any accidental change to raw data
• Extended electronic signatures
  • Device ID includes manufacturer ID and product ID
  • Unique ID
  • User writable Serial Number
• Dedicated 256-byte special sector F-RAM
  • Dedicated special sector write and read
  • Content can survive up to three standard reflow cycles
• Low-power consumption at high speed
  • 5 mA (typ) active current for 108 MHz SPI SDR
  • 13 mA (typ) active current for 108 MHz QSPI SDR and 54 MHz QSPI DDR
  • 158 μA (typ) standby current
  • 0.75 μA (typ) deep power down mode current
  • 0.1 μA (typ) hibernate mode current
• Low-voltage operation:
  • CY15V104QSN: V_DD = 1.71 V to 1.89 V
  • CY15B104QSN: V_DD = 1.8 V to 3.6 V
• Operating temperature: -40 ℃ to +85 ℃
• Packages
  • 8-pin Small Outline Integrated Circuit (SOIC) package
  • 8-pin Grid-Array Quad Flat No-Lead (GQFN) package
• Restriction of hazardous substances (RoHS) compliant