CY15B102QN/CY15V102QN, EXCELON™-AUTO 2-MBIT (256K X 8) AUTOMOTIVE-E SERIAL (SPI) F-RAM | Cypress Semiconductor
CY15B102QN/CY15V102QN, EXCELON™-AUTO 2-MBIT (256K X 8) AUTOMOTIVE-E SERIAL (SPI) F-RAM
Last Updated:
Jun 03, 2020
Version:
*M
The CY15X102QN is an 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.
- 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K * 8
- Virtually unlimited endurance of 10 trillion (1013) read/write cycles
- 121-year data retention (See Data Retention and Endurance on page 20)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Fast serial peripheral interface (SPI)
- Up to 50-MHz frequency
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
- Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP) pin
- Software protection using Write Disable (WRDI) instruction
- Software block protection for 1/4, 1/2, or entire array
- Device ID and Serial Number
- Device ID includes manufacturer ID and product ID
- Unique ID
- Serial Number
- Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Stored content can survive up to 3 standard reflow soldering cycles
- Low-power consumption
- 250 μA (typ) active current at 1 MHz
- 2.4 mA (typ) active current at 50 MHz
- 2.2 μA (typ) standby current
- 0.75 μA (typ) deep power down mode current
- 0.1 μA (typ) hibernate mode current
- Low-voltage operation:
- CY15V102QN: VDD = 1.71 V to 1.89 V
- CY15B102QN: VDD = 1.8 V to 3.6 V
- Automotive operating temperature: -40 ℃ to +125 ℃
- 8-pin Small Outline Integrated Circuit (SOIC) package
- Restriction of hazardous substances (RoHS) compliant
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