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CY15B102QN/CY15V102QN, EXCELON™-AUTO 2-MBIT (256K X 8) AUTOMOTIVE-E SERIAL (SPI) F-RAM | Cypress Semiconductor


Last Updated: 
Jun 03, 2020

The CY15X102QN is an 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

  • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K * 8
    • Virtually unlimited endurance of 10 trillion (1013) read/write cycles
    • 121-year data retention (See Data Retention and Endurance on page 20)
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Fast serial peripheral interface (SPI)
    • Up to 50-MHz frequency
    • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
  • Sophisticated write protection scheme
    • Hardware protection using the Write Protect (WP) pin
    • Software protection using Write Disable (WRDI) instruction
    • Software block protection for 1/4, 1/2, or entire array
  • Device ID and Serial Number
    • Device ID includes manufacturer ID and product ID
    • Unique ID
    • Serial Number
  • Dedicated 256-byte special sector F-RAM
    • Dedicated special sector write and read
    • Stored content can survive up to 3 standard reflow soldering cycles
  • Low-power consumption
    • 250 μA (typ) active current at 1 MHz
    • 2.4 mA (typ) active current at 50 MHz
    • 2.2 μA (typ) standby current
    • 0.75 μA (typ) deep power down mode current
    • 0.1 μA (typ) hibernate mode current
  • Low-voltage operation:
    • CY15V102QN: VDD = 1.71 V to 1.89 V
    • CY15B102QN: VDD = 1.8 V to 3.6 V
  • Automotive operating temperature: -40 ℃ to +125 ℃
  • 8-pin Small Outline Integrated Circuit (SOIC) package
  • Restriction of hazardous substances (RoHS) compliant
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