CY15B102QN/CY15V102QN, EXCELON™-AUTO 2-MBIT (256K X 8) AUTOMOTIVE-E SERIAL (SPI) F-RAM

The CY15X102QN is an 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

• 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K * 8
  • Virtually unlimited endurance of 10 trillion (10¹³) read/write cycles
  • 121-year data retention (See Data Retention and Endurance on page 20)
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI)
  • Up to 50-MHz frequency
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme
  • Hardware protection using the Write Protect (WP) pin
  • Software protection using Write Disable (WRDI) instruction
  • Software block protection for 1/4, 1/2, or entire array
• Device ID and Serial Number
  • Device ID includes manufacturer ID and product ID
  • Unique ID
  • Serial Number
• Dedicated 256-byte special sector F-RAM
  • Dedicated special sector write and read
  • Stored content can survive up to 3 standard reflow soldering cycles
• Low-power consumption
  • 250 μA (typ) active current at 1 MHz
  • 2.4 mA (typ) active current at 50 MHz
  • 2.2 μA (typ) standby current
  • 0.75 μA (typ) deep power down mode current
  • 0.1 μA (typ) hibernate mode current
• Low-voltage operation:
  • CY15V102QN: V_DD = 1.71 V to 1.89 V
  • CY15B102QN: V_DD = 1.8 V to 3.6 V
• Automotive operating temperature: -40 ℃ to +125 ℃
• 8-pin Small Outline Integrated Circuit (SOIC) package
• Restriction of hazardous substances (RoHS) compliant