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CY14V116N: 16-Mbit (1024 K × 16) nvSRAM | Cypress Semiconductor

CY14V116N: 16-Mbit (1024 K × 16) nvSRAM

Last Updated: 
Nov 04, 2020
Version: 
*J

16-Mbit (1024 K × 16) nvSRAM

Features

  • 16-Mbit nonvolatile static random access memory (nvSRAM)
  • High reliability
  • Sleep mode operation
  • Low power consumption
  • Operating voltage
  • Industrial temperature: –40 °C to +85 °C
  • 165-ball fine-pitch ball grid array (FBGA) package
  • Restriction of hazardous substances (RoHS) compliant
  • For more, see pdf.

Functional Description

The Cypress CY14V116N is a fast SRAM, with a nonvolatile element in each memory cell. The memory is organized as 1024 K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written to the SRAM.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

For the full version of this message, please download the PDF version.