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CY14B104LA, CY14B104NA: 4-Mbit (512 K × 8/256 K × 16) nvSRAM | Cypress Semiconductor

CY14B104LA, CY14B104NA: 4-Mbit (512 K × 8/256 K × 16) nvSRAM

Last Updated: 
May 22, 2017

4-Mbit (512 K × 8/256 K × 16) nvSRAM


  • 20 ns, 25 ns, and 45 ns access times
  • Internally organized as 512K x 8 (CY14B104LA) or 256K x 16 (CY14B104NA)
  • Hands off automatic STORE on power down with only a small capacitor
  • STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power down
  • RECALL to SRAM initiated by software or power up
  • Infinite read, write, and recall cycles
  • 1 million STORE cycles to QuantumTrap
  • 20 year data retention
  • Single 3V 20%, -10% operation
  • Industrial temperature
  • Packages
    • 44-/54-pin thin small outline package (TSOP) Type II
    • 48-ball fine-pitch ball grid array (FBGA)
  • Pb-free and restriction of hazardous substances (RoHS) compliant
  • For more, see pdf

Functional Description

The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing the world’s most reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.