AN43380 - HSB Operation in nvSRAMs | Cypress Semiconductor
AN43380 - HSB Operation in nvSRAMs
Cypress’s nonvolatile synchronous random access memory (nvSRAM) combines the best features of SRAM and EEPROM and makes it the fastest and the most reliable nonvolatile memory. Every bit of the nvSRAM is constituted by integrating a fast SRAM and a SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) nonvolatile memory. The SRAM is read from and written to it an infinite number of times, while independent nonvolatile data resides in the nonvolatile elements.
|File Title||Language||Size||Last Updated|
|AN43380 HSB Operation in nvSRAMs.pdf||English||590.01 KB||11/23/2015|
|AN43380 HSB Operation in nvSRAMs (Chinese).pdf||Chinese||476.65 KB||11/23/2015|
|AN43380 HSB Operation in nvSRAMs (Japanese).pdf||Japanese||538.8 KB||11/23/2015|
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