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AN217979 - Endurance and Data Retention Characterization of Infineon Flash Memory | Cypress Semiconductor

AN217979 - Endurance and Data Retention Characterization of Infineon Flash Memory

Last Updated: 
Apr 29, 2021
Version: 
*B
Nonvolatile flash memory technology is subject to physical degradation that can eventually lead to device failure. Vendors use two end-of-life parameters to specify the performance of reprogrammable nonvolatile memory: Program/Erase endurance and data retention. Understanding the practical meaning of these parameters and their inter-relationship allows a designer to properly assess the capabilities in order to meet the system performance and reliability requirements. This application note provides a perspective on nonvolatile flash memory reliability testing methodology and discusses the influence of key factors in terms of Program/Erase endurance and data retention. It also provides information on reliable usage models using Infineon products related to industry standards.

Dear valued customer,

Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you. 

Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.

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