AN217979 - Endurance and Data Retention Characterization of Cypress Flash Memory | Cypress Semiconductor
AN217979 - Endurance and Data Retention Characterization of Cypress Flash Memory
May 17, 2018
Non-volatile Flash memory technology is subject to physical degradation that can eventually lead to device failure. Vendors use two end-of-life parameters to specify the performance of reprogrammable non-volatile memory: These two parameters are Program/Erase endurance and data retention. Understanding the practical meaning of these parameters and their inter-relationship allows a designer to properly assess the capabilities in order to meet the system performance and reliability requirements. This application note provides a perspective on Cypress nonvolatile flash memory reliability testing methodology and discusses the influence of key factors in terms of Program/Erase endurance and data retention. It also provides information on reliable usage models using Cypress products related to industry standards.