When Failure is Not an Option: Think of Cypress’ HyperRAM 2.0 | Cypress Semiconductor
When Failure is Not an Option: Think of Cypress’ HyperRAM 2.0
We live in an amazing world. Less than a decade ago, it was impossible to imagine the level of instant access we have today, like the instant access we have to data and devices. Now that we’ve gotten a taste of what instant access can do for us, we want more, and we want it faster. Embedded memory will play a very important role in expanding the “instant-on” capabilities across multiple industries and end-applications, such as automotive and industrial IoT (IIoT).
Advances in automotive ‒ from improved comfort and safety to autonomous vehicles ‒ require not only more features and “horsepower,” but also the need for failsafe systems. When a car is traveling at 70 mph or is crawling in bumper-to-bumper traffic, a failure can be fatal. Having a reliable, failsafe memory solution is one of many, key technologies that can help reduce the risk of disaster on the road. This is important to enable autonomous and self-driving cars to navigate the roads safely.
Industrial IoT provides immense value for efficiency and safety. For companies that rely on IIoT, minimizing downtime due to technical failures is key to keeping business running efficiently. Memory plays a key role in several ways. It holds the machines boot code, and any corruption of the data can cause downtime. It’s also capable of recording data to the last instant before shutdown and captures the precise point that the device stopped. Once the device can resume functioning, the memory can check for errors to prevent further issues and “remember” where the device left off to continue operation.
As instant-on capabilities become a mandatory requirement, memory is quickly hitting size, power, and design limitations. Several memory technologies have reached their limitations, preventing industries such as automotive or industrial from reaching their full potential.
What system designers need is more memory data capacity that requires a small PCB, enables high read-and-write bandwidth, and uses a separate bus from the NOR Flash memory bus. Existing solutions receive only one of these three things. This ultimately forces system designers to choose between package size, pins for data transfer, and bandwidth capability or power efficiency in the hopes of achieving the perfect memory device.
With Cypress’ new HyperRAM 2.0, designers will no longer need to compromise. This solution is a blend of the best memory attributes to meet the needs of next-gen applications and is the most advanced self-refresh DRAM optimized embedded system on the market today. Cypress’ HyperRAM 2.0 has the following features:
- Expanded expansion memory storage with a 64/128Mb scratchpad system
- Reduced pin count, including a 12-pin HyperBus (comparable to HyperFlash NOR Flash memory)
- High read-and-write bandwidth, measuring up to 400 MBps with the industry’s smallest 48-mm 224-ball BGA package
- Operating in extended industrial and automotive grade 3 and 2 temperature ranges
- AEC-Q100 qualified
Essentially, all the best features of comparable technologies in today’s market ‒ including HyperRAM, Parallel ADMUX, SDRAM, and DDR SDRAM ‒ are combined into one with HyperRAM 2.0 to provide instant access to data and unparalleled performance in virtually any operating environment.
The technology we have available today is enabling a new and exciting world. And that’s why HyperRAM 2.0 will enable automotive, industrial, and IoT applications, and drive our desire for an increasingly on-demand world, while ensuring we can trust that these new devices will function safely and reliably.
To learn more about HyperRAM 2.0, visit: https://www.cypress.com/products/hyperram-20-memory