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4-Mbit nvSRAM photo | Cypress Semiconductor

4-Mbit nvSRAM photo

Last Updated:

January 12, 2010

Cypress's 4-Mbit non-volatile static random access memory (nvSRAM) features access times as low as 15 ns, infinite read, write and recall cycles, and 20-year data retention. These features make it ideal for applications requiring continuous high-speed writing of data and absolute non-volatile data security including RAID applications, harsh environment industrial controls, and data logging functions in automotive, medical and data communications systems.

The nvSRAMs offer the best alternative for fast, non-volatile memory. They reduce board space and design complexity compared to battery-backed SRAMs, and are more economical and reliable than magnetic (MRAM) or ferroelectric (FRAM) memories. The 4-Mbit nvSRAM is available in either a 512-Kbit x 8 (CY14B104L) or 256-Kbit x 16 (CY14B104N) configuration. The new products are the latest in a series of nvSRAMs from Cypress, which include 256K- and 1-Mbit nvSRAM devices currently shipping in production volumes.

Click the download link above for a high-resolution photo of the 4-Mbit nvSRAM.