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QDR-II+ | Cypress Semiconductor


Cypress’s QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT).

The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus “turnaround” time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.


Maximum Frequency 550 MHz (Burst of 4)
333 MHz (Burst of 2)
Maximum Random Transaction Rate 550 MT/s (Burst of 4)
667 MT/s (Burst of 2)
Density 18-144 Mb
Bus Width x18, x36
Burst Length 2, 4
Package FBGA165
Read Latency 2.0, 2.5 cycles
Core Voltage 1.8 V
I/O Voltage 1.5 V
On-Die Termination Available
  1. Download the QDR-II+ SRAM Design Guide
  2. Download the QDR-II+ Datasheets