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Nonvolatile RAM | Cypress Semiconductor

Nonvolatile RAM

Cypress Semiconductor is the worldwide leader in Nonvolatile RAM (NVRAM) products with the broadest portfolio on the market and over 1 billion devices shipped. Cypress has two complimentary families of NVRAM products: F-RAM, the industry’s most energy-efficient serial NVRAM solution, and nvSRAM, the industry’s fastest parallel NVRAM solution. Cypress was the first to produce F-RAM and nvSRAM products and has 25 years of experience in NVRAM technology.

Cypress F-RAM Key Features:

  • 4Kb to 4Mb densities
  • Serial I2C and SPI interface options
  • Parallel interface options
  • Low power, instant data capture on power loss
  • 100 trillion cycle endurance
  • No batteries required to store data on power loss; RoHS compliant
  • Radiation and magnetic field tolerant
  • Processor Companions with integrated analog and digital functions

Cypress nvSRAM Key Features:

  • 64Kb to 16Mb devices
  • Asynchronous parallel and ONFI 1.0 interface options
  • Serial interface options
  • As low as 20 ns access times
  • Infinite endurance
  • No batteries required to store data on power loss; RoHS compliant
  • Optional Real Time Clock (RTC)

CY15FRAMKIT-001: Cypress's Serial F-RAM™ Development Kit (Arduino™-Compatible)



 CY15FRAMKIT-001 Mounted on PSoC 4 Pioneer Kit

CY15FRAMKIT-001 Mounted on Arduino UNO R3 Kit


Develop with the world’s most energy-efficient, fast nonvolatile RAMs

CY15FRAMKIT-001 is an easy-to-use and inexpensive F-RAM development kit for Cypress’s high-performance, high-reliability and energy-efficient serial F-RAM devices. The development kit supports the following key features:

  • Compatible with Cypress’s CY8CKIT-042, CY8CKIT-042-BLE and CY8CKIT-040 kits and Arduino UNO R3 board
  • Two wide operating voltage serial F-RAM devices: a 256-Kbit SPI F-RAM and a 256-Kbit I2C F-RAM with an option to operate at either 3.3 V or 5.0 V supply
  • Stackable connectors are Arduino compatible and allow other Arduino shields to be connected

Order your Serial F-RAM Development Kit today

F-RAM Applications

Smart E-Meters
    Automotive Infotainment Systems
      Multi-Function Printers
        Wearable Electronics
          Vehicle Traveling Data Recorders (VTDR)

            nvSRAM Applications

            RAID Controller Cards
              Programmable Logic Controllers (PLCs)
                Network Routers
                  Electronic Gaming Machines
                    Are you wondering which nonvolatile RAM technology to start with?
                    Use the following chart to see whether F-RAM or nvSRAM is the best fit. 

                    Nonvolatile SRAM (nvSRAM) combines Cypress's industry leading SRAM technology with best-in-class SONOS nonvolatile technology. Under normal operation, nvSRAM behaves like a conventional asynchronous SRAM using standard signals and timing. nvSRAM performs parallel random access reads and writes as fast as 20 ns.

                    On a power glitch or failure, nvSRAM automatically saves a copy of the SRAM data into nonvolatile memory cells, where the data stays protected for over 20 years. The transfer between SRAM and nonvolatile memory cells is completely parallel (cell for cell) allowing the operation to complete in 8 ms or less, without any user intervention. On power-up, nvSRAM returns the data back to the SRAM and system operation can continue from where it left off. nvSRAM also provides user controlled software STORE and RECALL initiation commands, as well as a user controlled hardware STORE command in most versions.

                    Cypress's nvSRAMs are offered in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages.


                    nvSRAM Technology

                    Cypress nvSRAM's nonvolatile cells are based on SONOS technology. They take advantage of Fowler-Nordheim Tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN Tunneling is that it results in vastly higher NV endurance and much slower wear out. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels.

                    Product Selectors

                    nvSRAM technology

                    Cypress Serial F-RAM (Ferroelectric RAM) combines nonvolatile data storage with the high performance of RAM.

                    Serial F-RAM provides fast writes at full interface speed. Serial F-RAM does not have any write delays and data is instantly nonvolatile. Traditional nonvolatile memories have delays of 5 or more milliseconds before data becomes nonvolatile. If power is disrupted, pending data is lost unless the system has extra capacitance or batteries to keep the system on until data is stored.

                    Serial F-RAM offers virtually unlimited endurance of 100 trillion read/write cycles. Traditional nonvolatile memories typically have less than 1 million cycle endurance, forcing system designers to use complex wear-leveling routines and up to 4x more density to prolong the lifetime of these memories.


                    Serial F-RAM consumes as low as 300 µA active and 6 µA standby current. Because of fast write speeds, Serial F-RAM stays active for short periods of time, yielding very low energy consumption. Traditional nonvolatile memories with write delays must stay active for longer periods of time, resulting in higher energy consumption.

                    Serial F-RAM offers a pin-to-pin and footprint compatible EEPROM replacement with minor firmware changes.

                    F-RAM Technology

                    Cypress F-RAM is built on ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby producing a power efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption, making F-RAM a reliable nonvolatile memory. A common misconception is that ferroelectric crystals are ferromagnetic or have similar magnetic properties. In fact, ferroelectric materials switch in an electric field and are not affected by magnetic fields.

                    Solution Example NVRAM

                    Click to view NVRAM Solution Example in full screen

                    Solution Example NVRAM Electronic Flight Instrument Systems

                    Click to view NVRAM Electronic Flight Instrument Systems Solution Example in full screen