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F-RAM Parallel | Cypress Semiconductor

F-RAM Parallel

Cypress’s parallel F-RAM products provide instant nonvolatile data retention on power loss without the need for a battery or capacitor. The ferroelectric material in the F-RAM memory cells is highly resistant to influence by radiation and magnetic field exposure, providing soft error rate immunity and making it a superior alternative to MRAM. Parallel F-RAMs are ideal for mission-critical applications that require high performance, high reliability and high-endurance memory such as programmable logic controllers.


Attribute Parallel F-RAM Features
Density 64Kb - 4Mb
Organization 8K x 8
32K x 8
64K x 16
128K x 16
256K x 16
Access Time As low as 55 ns
Voltage Range 2.0 – 3.6 V
2.7 – 3.6 V
2.7 – 5.5 V
4.5 – 5.5 V
Temperature Range -40˚C to +85˚C
AECQ-100 Grade 1
Grade 3
Package 28 SOIC