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16Mb nvSRAM- Replacement for Battery-Backed SRAM and MRAM | Cypress Semiconductor

16Mb nvSRAM- Replacement for Battery-Backed SRAM and MRAM

  • 16bit nvSRAM

The 16Mb nvSRAM Advantage Over Battery-Backed SRAM and MRAM

Cypress introduces the industry's fastest high-density NVRAM solution, the 16Mb nvSRAM, to replace battery-backed SRAM and MRAM solutions in high-performance systems for mission critical applications. 

Battery-Backed SRAM Challenges

High-performance systems require nonvolatile memory solutions to capture data instantly and reliably on power loss. Battery-backed SRAM and Do-It-Yourself (DIY) battery-backed SRAM solutions have traditionally been used for this purpose, but battery usage forces undesirable trade-offs. Batteries increase system cost with power-management circuits and firmware, reduce system reliability, require maintenance to replace expired batteries, violate RoHS regulations with heavy metals, and risk data loss if the battery charge is drained before system power is restored.

Everspin MRAM Challenges

Some designers have replaced their battery-backed SRAM solution with Everspin MRAM, but MRAM (magnetoresistive random-access memory) is susceptible to data corruption under magnetic field exposure. 

The 16Mb nvSRAM- A Superior Solution

The 16Mb nvSRAM solves all of these problems. It stores data reliably on power loss for up to 20 years without the need for batteries and provides magnetic field immunity. While relieving your worries, it blows the competition away with 25ns access times, compared to 45ns access times offered by battery-backed SRAM solutions or 35ns access times offered by Everspin MRAM. It provides an integrated Real Time Clock (RTC) for accurate time-stamping and both asynchronous parallel interface and ONFI Standard 1.0 Interface options to be compatible with a broad range of controllers. In fact, this is the only nonvolatile RAM on the market with an ONFI Standard 1.0 Interface option. It was designed for customers who need the highest-performance, most reliable nonvolatile memory possible for mission critical applications including industrial automation, computing, server, networking, avionics and electronic gaming machines. Click here to learn more about Cypress nvSRAM in some of these applications or click here to see the specifications. 


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Programmable Logic Controllers (PLCs)
    Network Routers
      Electronic Gaming Machines
          Asynchronous Parallel Interface ONFI 1.0 Interface
        Density 16 Mb 16 Mb
        Access Time 25 ns, 30 ns, 45 ns 30 ns
        Battery Requirement No No
        RoHS Compliant Yes Yes
        Nonvolatile Retention 20 Years 20 Years
        Magnetic Field Immunity Yes Yes
        Real-Time Clock Option Yes No
        Packages 44TSOPII, 48TSOPI, 54TSOPII, 165FBGA 165FBGA

        Fastest NVRAM in the Industry: The new 16 Mb nvSRAM provides 25 ns read/write access time with unlimited write endurance

        Industry's Only ONFI 1.0 Interface nvRAM: Cypress’s 16 Mb nvSRAM offers both high-speed asynchronous parallel and ONFI Standard 1.0-compatible interfaces, making them compatible with a broad range of controllers

        Eliminates Batteries: Coin cell batteries reduce reliability and have a limited lifetime, which mandates system maintenance and downtime. Batteries contain heavy metals that violate RoHS regulations.
        Cypress’s 16 Mb nvSRAM requires no batteries to retain data on power loss for unlimited periods, thus meeting RoHS regulations

        Magnetic Field Immunity: Mission-critical data may be subject to magnetic fields. Cypress’s 16 Mb nvSRAM is immune to magnetic field interference

        Industry Standard Package Options: 44TSOPII, 48TSOPI, 54TSOPII, and 165FBGA

        Cypress nvSRAM

        Nonvolatile SRAM (nvSRAM) combines Cypress's industry leading SRAM technology with best-in-class SONOS nonvolatile technology. SONOS (Silicon Oxide Nitride Oxide Silicon) is a transistor with a polysilicon gate (S), an oxide nitride oxide (ONO) gate dielectric and a silicon substrate (S) used to create a nonvolatile memory storage cell. Under normal operation, nvSRAM behaves like a conventional asynchronous SRAM using standard signals and timing. nvSRAM performs parallel random access reads and writes as fast as 20 ns.

        On a power glitch or failure, nvSRAM automatically saves a copy of the SRAM data into nonvolatile memory cells, where the data stays protected for over 20 years. The transfer between SRAM and nonvolatile memory cells is completely parallel (for all cells) allowing the operation to complete in 8 ms or less, without any user intervention. On power-up, nvSRAM returns the data back to the SRAM and system operation can continue from where it left off. nvSRAM also provides user controlled software STORE and RECALL commands, as well as a user controlled hardware STORE command in most versions.

        Cypress's parallel nvSRAM portfolio includes 256 Kb to 16 Mb device densities in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages. Cypress nvSRAM is available with asynchronous parallel and ONFI 1.0 interfaces.

        nvSRAM Technology

        Cypress nvSRAM's nonvolatile cells are based on SONOS technology. They take advantage of Fowler-Nordheim Tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN Tunneling is that it results in vastly higher NV endurance and much slower wear out compared to floating gate technology.. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels.