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1 Mb Quad SPI nvSRAM | Cypress Semiconductor

1 Mb Quad SPI nvSRAM

  • 1MB Quad SPI nvSRAM

Cypress adds a new interface to its industry-leading nonvolatile RAM (NVRAM) portfolio. The 1Mb Quad Serial Peripheral Interface (SPI) nvSRAM meets the data throughput performance of 45-ns, high-speed parallel NVRAM with the reduced pin count of a 16-pin SOIC package and 24-ball BGA package. Cypress nvSRAM solutions reliably store data on power loss without the use of batteries, reducing system cost and maintaining RoHS compliance.  The 1Mb Quad SPI nvSRAM is available with an optional integrated Real Time Clock (RTC) and an extended industrial temperature grade of -40˚C to 105˚C.

The new 1Mb Quad SPI nvSRAM is the ideal solution for write journaling in RAID storage applications, data logging in industrial automation applications and storing critical configuration data in computing and networking applications.


High Performance: Offers a 16-pin Quad SPI interface with a 108 MHz clock rate, exceeding the throughput performance of a 44-pin x16, 40-ns parallel interface

Battery-Free: Stores data reliably on power loss without batteries, reducing board space and system cost, and is RoHS compliant

Low Pin Count:  Requires only 6 MCU I/Os to control, compared to 29 required by a typical x8 1Mb parallel SRAM solution

Magnetic Field Immunity: Stores data reliably on power loss, even in magnetic fields

  1. Download the Nonvolatile Product Roadmap
  2. Download the product overview and the datasheets - CY14V101PS and CY14V101QS 
  3. Download the app notes - AN96588 and AN96589
  4. Join the Cypress Developer Community


RAID systems use an array of disks from one or more commonly accessible sub-systems to create a secure crash-proof file-system for critical data. The array is managed by array management software that provides a transparent interface to client systems. In modern RAID systems the Array Management Software can run in the host or in a dedicated embedded controller.

nvSRAMs are used for the current transaction log (called the “write journal”) that tracks each data stream as it is segmented and stored across the HDD array. 

NVSRAM’s performance, high endurance and non-volatility enables industry leading RAID servers with enhanced data center fault recovery, reduced system downtime and lower total cost of ownership. 


Industrial Automation

As electronic systems get more complex, safety is a major consideration in the design and deployment of industrial automation elements. In a typical industrial installation, data recording systems continuously record operating state and configuration. This enables safety audits, equipment monitoring, safe restart after power-fail and failure analysis. Many industrial systems need to be power-fail secure and can recover from power loss through systems that capture and record state information. Nonvolatile memory is a critical component in industrial data recording systems. The choice of memory technology is based on reliability of data storage and power fail security. With a reliable power fail security mechanism, nvSRAM products are an ideal solution for industrial applications. A representative set of industrial applications that can benefit from nvSRAM technology include:

  • Power system monitoring and distribution
  • Programmable Logic Controller (PLC) units
  • Motor and process control
  • Test and measurement
  • Sensor and data acquisition



Network routers use nvSRAM for storing critical configuration data such as user startup-configuration file so that when router’s power is restored, the bootstrap loader loads the operating system’s image into the router’s RAM buffer during the configuration process. Once the configuration process is complete with the OS image now loaded, nvSRAM is examined by the bootstrap loader to determine if the previous version of configuration file is saved. This file is then loaded into RAM and executed, at which point the router becomes operational. If the file is missing from the nvSRAM, a manual setup dialogue is established through operator interactions and the configuration is stored back to the nvSRAM for the next power cycle. When the router is powered off, the contents of the RAM buffer is cleared while the nvSRAM retains its contents. Once power is restored, the recovery from power failure is performed quickly due to a copy of the router’s previous configuration file being stored in nvSRAM. As a result, the need to maintain a separate hard disk to store the configuration file is eliminated.

  Quad SPI Interface
Density 1 Mb
Clock Frequency 108 MHz
Random Data Throughput 24 MBps
Burst Data Throughput 54 MBps
Read and Write Endurance Infinite
Battery Requirement No
Data Retention 20 years
Software Write Protects Yes
Hardware Write Protects Yes
Industrial Temperature Range -40 to 85⁰C
Extended Industrial Temperature Range -40 to 105⁰C
I/O Voltage 1.8 V
Supply Voltage 3.0 V
Package Options

16-SOIC, 24-BGA

Real Time Clock Option Yes

Cypress nvSRAM

Nonvolatile SRAM (nvSRAM) combines Cypress's industry leading SRAM technology with best-in-class SONOS nonvolatile technology. SONOS (Silicon Oxide Nitride Oxide Silicon) is a transistor with a polysilicon gate (S), an oxide nitride oxide (ONO) gate dielectric and a silicon substrate (S) used to create a nonvolatile memory storage cell. Under normal operation, nvSRAM behaves like a conventional asynchronous SRAM using standard signals and timing. nvSRAM performs parallel random access reads and writes as fast as 20 ns.


On a power glitch or failure, nvSRAM automatically saves a copy of the SRAM data into nonvolatile memory cells, where the data stays protected for over 20 years. The transfer between SRAM and nonvolatile memory cells is completely parallel (for all cells) allowing the operation to complete in 8 ms or less, without any user intervention. On power-up, nvSRAM returns the data back to the SRAM and system operation can continue from where it left off. nvSRAM also provides user controlled software STORE and RECALL commands, as well as a user controlled hardware STORE command in most versions.


Cypress's parallel nvSRAM portfolio includes 256 Kb to 16 Mb device densities in industry-standard, RoHS-compliant packaging options such as TSOP, FBGA, SSOP, and SOIC packages. Cypress nvSRAM is available with asynchronous parallel and ONFI 1.0 interfaces.


nvSRAM Technology

Cypress nvSRAM's nonvolatile cells are based on SONOS technology. They take advantage of Fowler-Nordheim Tunneling (FN Tunneling) to store data by trapping charge in a sandwiched nitride layer. A key advantage of FN Tunneling is that it results in vastly higher NV endurance and much slower wear out compared to floating gate technology.. Another advantage of SONOS technology is its ease of integration in CMOS (only two additional masks). This allows the NV cell to be located immediately adjacent to the 6T SRAM cell in each memory bit making the transfers between SRAM to NV all happen in parallel and at very low power levels.


Part Number Interface Clock Frequency Supply Voltage I/O Voltage Grade Temp Package RTC
CY14V101QS-SF108XI Quad SPI 108-MHz 3.0 V 1.8 V Industrial -40 to 80 °C 16-SOIC No
CY14V101QS-SF108XQ Quad SPI 108-MHz 3.0 V 1.8 V Ext. Industrial -40 to 105 °C 16-SOIC No
CY14V101PS-SF108XI Quad SPI 108-MHz 3.0 V 1.8 V Industrial -40 to 80 °C 16-SOIC Yes
CY14V101QS-SE108XI Quad SPI 108-MHz 3.0 V 1.8 V Industrial -40 to 80 °C 16-SOIC No
CY14V101QS-SE108XQ Quad SPI 108-MHz 3.0 V 1.8 V Ext. Industrial -40 to 105 °C 16-SOIC No
CY14V101QS-BK108XI Quad SPI 108-MHz 3.0 V 1.8 V Industrial -40 to 80 °C 24-BGA No
CY14V101QS-BK108XQ Quad SPI 108-MHz 3.0 V 1.8 V Ext. Industrial -40 to 105 °C 24-BGA No

1 Mb Quad SPI nvSRAM

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Solution Example Quad SPI NVRAM

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