Processes | Cypress Semiconductor
Processes
Cypress has a wide variety of process platforms to choose from, each with a number of process options for metal layers, FET characteristics, NVM, and passive components.
Design Rule (nm) | 90 | 130 | 180 | 250 | 350 |
# Layers Metal | 3-5 | 3-6 | 3-4 | 3-4 | 2-3 |
SAC contact | Y | Y | Y | Y | Y |
Low-power SRAM | Y | Y | Y | Y | |
Isolation | STI | STI | STI | sr-LOCOS | sr-LOCOS |
Gate | W-clad Poly | Poly | Poly | Poly | Poly |
SONOS NVM | Y* | Y* | |||
NPN ![]() |
Y* | ||||
Capacitor | Y* | Y* | |||
Precision Resistor | Y* | Y* | |||
Inductor | Y* | ||||
OTP | Y* | ||||
Polyimide | Y* | Y* | Y* | Y* | |
Dual-Damascene Interconnect | Y* |
*AVAILABLE AS AN OPTION
Design kits and standard cell IP libraries will be made available to customers, and higher level IP blocks are available for licensing.