Cypress.com: Documentation http://www.cypress.com/?app=search&searchType=advanced&id%3D71 CY62136ESL MoBL®: 2-Mbit (128 K × 16) Static RAM http://www.cypress.com/?rID=37637 2-Mbit (128 K × 16) Static RAM

Features

  • Very high speed: 45 ns
  • Wide voltage range: 2.2V to 3.6V and 4.5V to 5.5V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-pin thin small outline package (TSOP) II package
     

Functional Description

The CY62136ESL is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling.

]]> Wed, 23 Jan 2013 04:01:47 -0600 CY62127DV30: MoBL® 1-Mbit (64 K × 16) Static RAM http://www.cypress.com/?rID=37605 MoBL® 1-Mbit (64 K × 16) Static RAM

Features

  • Temperature Ranges
    • Industrial: –40°C to 85°C
    • Automotive: –40°C to 125°C
  • Very high speed: 45 ns
  • Wide voltage range: 2.2V to 3.6V
  • Pin compatible with CY62127BV
  • Ultra-low active power
    • Typical active current: 0.85 mA @ f = 1 MHz
    • Typical active current: 5 mA @ f = fMAX
  • For more, see pdf

Functional Description

The CY62127DV30 is a high-performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling.

]]> Tue, 22 Jan 2013 05:01:42 -0600 CY62138F MoBL®: 2-Mbit (256 K × 8) Static RAM http://www.cypress.com/?rID=37615 2-Mbit (256K x 8) Static RAM

Features

  • High speed: 45 ns
  • Wide voltage range: 4.5 V – 5.5 V
  • Pin compatible with CY62138V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 5 μA
  • Ultra low active power
    • Typical active current: 1.6 mA @ f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power down when deselected
  • complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 32-pin SOIC and 32-pin thin small outline package (TSOP) II packages

Functional Description

The CY62138F is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Tue, 22 Jan 2013 04:57:36 -0600 CY62137FV30 MoBL®: 2-Mbit (128 K × 16) Static RAM http://www.cypress.com/?rID=37613 2-Mbit (128K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40 °C to 85 °C
  • Wide voltage range: 2.20 V–3.60 V
  • Pin compatible with CY62137CV/CV25/CV30/CV33, CY62137V, and CY62137EV30
  • Ultra low standby power
    • Typical standby current: 1 μA
  • For more, see pdf
     

Functional Description

The CY62137FV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Tue, 22 Jan 2013 04:02:50 -0600 CY62138FV30 MoBL®: 2-Mbit (256 K × 8) Static RAM http://www.cypress.com/?rID=37616 2-Mbit (256K x 8) Static RAM

Features

  • Very High-speed: 45 ns
  • Temperature ranges
    • Industrial: –40 °C to 85 °C
    • Automotive-A: –40 °C to 85 °C
  • Wide voltage range: 2.20 V to 3.60 V
  • Pin compatible with CY62138CV25/30/33
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 5 μA
  • For more, see pdf

Functional Description

The CY62138FV30 is a high performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption. Place the device into standby mode reducing power consumption when deselected (CE1 HIGH or CE2 LOW).

]]> Tue, 22 Jan 2013 03:08:02 -0600 CY62148EV30LL - A: 4-Mbit (512 K x 8) Static RAM http://www.cypress.com/?rID=73810 4-Mbit (512 K × 8) Static RAM

Features

  • Very high speed: 55 ns
    • Wide voltage range: 2.20 V to 3.60 V
  • Temperature range:
    • Automotive-E: –40 °C to +125 °C
  • Pin compatible with CY62148DV30
  • Ultra low standby power
    • Typical standby current: 3 μA
    • Maximum standby current: 20 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • For more, see pdf

Functional Description

The CY62148EV30LL Automotive is a high performance CMOS static RAM organized as 512 K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption.

]]> Thu, 27 Dec 2012 04:34:23 -0600 AN6081 - Interfacing 90-nm Cypress Asynchronous SRAMs in Legacy Systems http://www.cypress.com/?rID=12711 Click here to download Application Note (PDF File)

Cypress's 90nm technology Asynchronous SRAMs have best-in-class specifications in speed and power making them an ideal choice as memories in a wide variety of applications today.

The application note below discusses how they are suited for present generation processors and controllers while Cypress' older generation SRAMs (250nm and 350nm) are a good fit for interfacing with legacy processors and controllers. The 90nm technology 5V devices are pin compatible with their older technology counterparts. The reason for Cypress continuing to support end users with older generations SRAMs is because of their increased VOH levels that ensure compliance with CMOS VIH levels of legacy processors and microcontrollers. While both generations of SRAM's have the same industry standard VOH spec, the difference in actual VOH levels enable Cypress to support processors of older and present generations, reiterating Cypress' commitment as the #1 supplier in the industry.

Please see the illustrations and the application note below for details.

Processor receiving data from SRAM on a read operation:

 

]]> Wed, 19 Dec 2012 02:29:55 -0600 QTP 111503: 4 Meg MoBL SRAM Family R95LD-3R, FAB 4 http://www.cypress.com/?rID=58509 Wed, 28 Nov 2012 06:19:22 -0600 QTP 054302: 4 MEG MOBL SRAM FAMILY, R95LD-3R, FAB 4 http://www.cypress.com/?rID=35881 Wed, 28 Nov 2012 06:15:30 -0600 QTP 061805: 1 Meg MoBL SRAM Automotive Devices R95LD-3R, FAB 4 http://www.cypress.com/?rID=35922 Wed, 28 Nov 2012 05:18:38 -0600 QTP 062206: 2 Meg MoBL SRAM Family Technology R95LD-3R, Fab4 http://www.cypress.com/?rID=72593 Tue, 27 Nov 2012 21:53:43 -0600 AN44517 - Design Recommendation for Battery Backed SRAMs Using Cypress MoBL® SRAMs http://www.cypress.com/?rID=12710 Battery Backed SRAM's (BBSRAM's), also called NVRAM's by system designers, are an important part of applications that require any kind of data backup in the event of a power failure. The block diagram below illustrates a simple FPGA/microcontroller-based application that contains a shared memory bus (Flash memory SRAM), a supervisor chip and a battery. In the event of a power failure, the battery-supervisor combination acts as a power backup for the SRAM, to ensure its contents are undisturbed. The supervisor chip places the SRAM in disable mode (standby) to reduce power consumption and extend battery life. This ensures data integrity and power savings.

The attached Application Note discusses Design Considerations that need to be taken into account when using Cypress MoBL SRAM's in these battery backed applications.

]]> Fri, 23 Nov 2012 01:12:16 -0600 CY62137EV30 MoBL®: 2-Mbit (128 K × 16) Static RAM http://www.cypress.com/?rID=37611 2-Mbit (128K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Wide voltage range: 2.20V 3.60 V
  • Pin-compatible with CY62137CV30
  • Ultra-low standby power
    • Typical standby current: 1μA
    • Maximum standby current: 7μA
  • Ultra-low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • For more, see pdf

Functional Description

The CY62137EV30 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life(TM) (MoBL(R)) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling.
]]> Fri, 23 Nov 2012 00:45:08 -0600 CY62138EV30 MoBL®: 2-Mbit (256 K × 8) MoBL® Static RAM http://www.cypress.com/?rID=37614 2-Mbit (256K x 8) MoBL® Static RAM

Features

  • Very high speed: 45 ns
    • Wide voltage range: 2.20V to 3.60V
  • Pin-compatible with CY62138CV30
  • Ultra-low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra-low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • For more, see pdf
 
Functional Description

The CY62138EV30 is a high-performance CMOS static RAM organized as 256K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. The device can be put into standby mode reducing power consumption when deselected (CE HIGH). 
]]> Fri, 23 Nov 2012 00:30:35 -0600 CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM http://www.cypress.com/?rID=38042 64-Mbit (4M x 16) Static RAM

Features

  • Very High Speed
    • 55 ns
  • Wide Voltage Range
    • 2.2V to 3.7V
  • Ultra Low Standby Power
    • Typical Standby Current: 8 μA
    • Maximum Standby Current: 48 μA
  • Ultra Low Active Power
    • Typical Active Current: 7.5 mA at f = 1 MHz
  • Easy Memory Expansion with CE1, CE2, and OE Features
  • Automatic Power Down when Deselected
  • CMOS for Optimum Speed and Power
  • Available in Pb-Free 48-Ball FBGA Package
     

Functional Description
 

The CY62187EV30 is a high performance CMOS static RAM organized as 4M words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.
]]> Mon, 22 Oct 2012 04:47:23 -0600 32 MEG MOBL STACKED DIE (CY62177DV), RAM8NLD, GSMC (FAB 5) QUALIFICATION REPORT http://www.cypress.com/?rID=58469 Thu, 04 Oct 2012 02:35:17 -0600 CY62256VN - VHDL http://www.cypress.com/?rID=61662 Fri, 21 Sep 2012 05:37:52 -0600 CY62127DV30_55 - VHDL http://www.cypress.com/?rID=61280 Fri, 21 Sep 2012 05:37:35 -0600 CY62148EV30 MoBL®: 4-Mbit (512 K × 8) Static RAM http://www.cypress.com/?rID=37623 4-Mbit (512K x 8) Static RAM

Features

  • Very high speed: 45 ns
    • Wide voltage range: 2.20V to 3.60V
  • Temperature range:
    • Industrial: –40°C to 85°C
    • Automotive-A: –40°C to 85°C
  • Pin compatible with CY62148DV30
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA (Industrial)
  • For more, see pdf
     

Functional Description

The CY62148EV30 is a high performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption.

]]> Wed, 12 Sep 2012 04:45:00 -0600 Footprint / Landpattern of an SRAM? http://www.cypress.com/?rID=26496 The footprint sram parts can be found at ipc.org. Please click on the following link: http://ipc.org/default.aspx You would have to register to get to the calculator. Once you register in the dropbox you will be given an option to enter your choice of package and there you can find the landpattern.

]]> Wed, 12 Sep 2012 03:22:01 -0600 AN66311 - Timing Recommendation for Byte Enables and Chip Enables in MoBL® SRAMs http://www.cypress.com/?rID=48325 This Application note explains a particular timing condition in SRAM accesses that could cause an unexpected behavior of the device. The condition involves Address lines and Chip Enable or Byte Enable lines. A workaround is also suggested in the application note. A brief pictorial representation is shown below; please read the application note for a detailed explanation.


]]> Tue, 11 Sep 2012 01:57:23 -0600 CY62148ESL - VHDL http://www.cypress.com/?rID=60468 Fri, 07 Sep 2012 01:34:33 -0600 CY62147EV30: 4-Mbit (256K x 16) Static RAM http://www.cypress.com/?rID=37620 4-Mbit (256K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40°C to 85°C
  • Wide voltage range: 2.20V to 3.60V
  • Pin compatible with CY62147DV30
  • Ultra low standby power
    • Typical standby current: 1 A
    • Maximum standby current: 7 A (Industrial)
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • For more, see pdf
     

Functional Description

The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.

]]> Wed, 05 Sep 2012 06:52:13 -0600 CY62177DV30: 32-Mbit (2M x 16) Static RAM http://www.cypress.com/?rID=37633 32-Mbit (2M x 16) Static RAM

Features

  • Very high speed: 55 ns and 70 ns
  • Wide voltage range: 2.20V–3.60V
  • Ultra-low active power
    • Typical active current: 2 mA @ f = 1 MHz
    • Typical active current: 15 mA @ f = fmax
  • Ultra low standby power
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • Packages offered in a 48-ball FBGA
     

Functional Description

The CY62177DV30 is a high-performance CMOS static RAM organized as 2M words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption.

]]> Wed, 22 Aug 2012 02:05:44 -0600 CY62167EV30 MoBL®: 16-Mbit (1M x 16 / 2M x 8) Static RAM http://www.cypress.com/?rID=13561 16-Mbit (1M x 16 / 2M x 8) Static RAM

Features

  • TSOP I package configurable as 1M × 16 or 2M x 8 SRAM
  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40°C to 85°C
    • Automotive-A: –40°C to 85°C
  • Wide voltage range: 2.20 V to 3.60 V
  • Ultra-low standby power
    • Typical standby current: 1.5 μA
    • Maximum standby current: 12 μA
  • For more, see pdf
     

Functional Description

The CY62167EV30 is a high performance CMOS static RAM organized as 1M words by 16 bits or 2M words by 8 bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).

]]> Mon, 30 Jul 2012 07:04:49 -0600 CY62158EV30 MoBL®: 8-Mbit (1024 K x 8) Static RAM http://www.cypress.com/?rID=37628 8-Mbit (1024 K x 8) Static RAM

Features

  • Very high speed: 45 ns
    • Wide voltage range: 2.20V–3.60V
  • Pin compatible with CY62158DV30
  • Ultra low standby power
    • Typical standby current: 2 μA
    • Maximum standby current: 8 μA
  • Ultra low active power
    • Typical active current: 1.8 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power down when deselected
  • CMOS for optimum speed/power
  • Offered in Pb-free 48-ball VFBGA, 44-pin TSOP II packages
     

Functional Description

The CY62158EV30 is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This  is ideal for providing More Battery Life™ (MoBL?) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption.

]]> Mon, 30 Jul 2012 06:40:43 -0600 CY62157EV30 MoBL®: 8 Mbit (512 K x 16) Static RAM http://www.cypress.com/?rID=13595 8 Mbit (512 K x 16) Static RAM

Features

  • Thin small outline package (TSOP) I package configurable as 512 K x 16 or 1 M x 8 static RAM (SRAM)
  • High speed: 45 ns
  • Temperature ranges
    • Industrial: –40°C to 85°C
    • Automotive-A: –40°C to 85°C
    • Automotive-E: –40°C to 125°C
  • Wide voltage range: 2.20V to 3.60V
  • Pin compatible with CY62157DV30
  • Ultra low standby power
  • For more, see pdf
     

Functional Description

The CY62157EV30 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life? (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 06:39:46 -0600 CY62256N: 256K (32K x 8) Static RAM http://www.cypress.com/?rID=37634 256K (32K x 8) Static RAM

Features

  • Temperature Ranges
    • Commercial: 0°C to +70°C
    • Industrial: -40°C to +85°C
    • Automotive-A: -40°C to +85°C
    • Automotive-E: -40°C to +125°C
  • High Speed: 55 ns
  • Voltage Range: 4.5V to 5.5V Operation
  • Low Active Power
    • 275 mW (max)
  • For more, see pdf
     

Functional Description

The CY62256N is a high performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tristate drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9 percent when deselected.

]]> Mon, 30 Jul 2012 05:26:57 -0600 CY7C10612DV33: 16-Mbit (1M x 16) Static RAM http://www.cypress.com/?rID=37660 16-Mbit (1M x 16) Static RAM

Features

  • High speed
    • tAA = 10 ns
  • Low active power
    • ICC = 175 mA at 100 MHz
  • Low CMOS standby power
    • ISB2 = 25 mA
  • Operating voltages of 3.3 ± 0.3V
  • 2.0V data retention
  • Automatic power down when deselected
  • For more, see pdf
     

Functional Description

The CY7C10612DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. To write to the device, take Chip Enables (CE) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).

]]> Mon, 30 Jul 2012 05:26:27 -0600 CY62157E: 8-Mbit (512K x 16) Static RAM http://www.cypress.com/?rID=37626 8-Mbit (512K x 16) Static RAM

Features

  • Very high speed: 45 ns
    • Industrial: –40°C to 85°C
    • Automotive-E: –40°C to 125°C
  • Wide voltage range: 4.5V–5.5V
  • Ultra low standby power
    • Typical standby current: 2 μA
    • Maximum standby current: 8 μA (Industrial)
  • Ultra low active power
    • Typical active current: 1.8 mA at f = 1 MHz
  • For more, see pdf
     

Functional Description

The CY62157E is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 05:25:45 -0600 CY62168EV30: 16-Mbit (2 M × 8) Static RAM http://www.cypress.com/?rID=37632 16-Mbit (2 M × 8) Static RAM

Features

  • Very high speed: 45 ns
  • Wide voltage range: 2.20 V to 3.60 V
  • Ultra low standby power
    • Typical standby current: 1.5 μA
    • Maximum standby current: 12 μA
  • Ultra low active power
    • Typical active current: 2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • Offered in Pb-free 48-ball FBGA package.
     

Functional Description

The CY62168EV30 is a high performance CMOS static RAM organized as 2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling.

]]> Mon, 30 Jul 2012 05:24:38 -0600 CY62168DV30: 16-Mbit (2M x 8) MoBL® Static RAM http://www.cypress.com/?rID=37631 16-Mbit (2M x 8) MoBL® Static RAM

Features

  • Very high speed
    • 55 ns
  • Wide voltage range
    • 2.2V – 3.6V
  • Ultra-low active power
    • Typical active current: 2 mA @ f = 1 MHz
    • Typical active current: 15 mA @ f = fMax (55 ns Speed)
  • Ultra-low standby power
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor(CMOS) for optimum speed/power
  • Available in non Pb-free 48-ball (VFBGA) package
     

Functional Description

The CY62168DV30 is a high-performance CMOS static RAMs organized as 2048Kbit words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.

]]> Mon, 30 Jul 2012 05:23:53 -0600 CY62167DV30: 16-Mbit (1M x 16) Static RAM http://www.cypress.com/?rID=37629 16-Mbit (1M x 16) Static RAM

Features

  • Thin small outline package(TSOP I )Configurable as 1M x 16 or as 2M x 8 SRAM
  • Wide voltage range: 2.2V – 3.6V
  • Ultra-low active power: Typical active current: 2 mA at f = 1 MHz
  • Ultra-low standby power
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed/power
  • Available in Pb-free and non Pb-free 48-ball VFBGA and 48-pin TSOP I package
     

Functional Description

The CY62167DV30 is a high-performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling.

]]> Mon, 30 Jul 2012 05:20:02 -0600 CY621472E30 MoBL®: 4-Mbit (256 K × 16) Static RAM http://www.cypress.com/?rID=55093 4-Mbit (256 K × 16) Static RAM

Features

  • Very high speed:45ns
  • Temperature range
    • Industrial:–40°Cto+85°C
  • Wide voltage range:2.20Vto3.60V
  • Ultra low standby power
    • Typical standby current:1μA
    • Maximum standby current:7μA(Industrial)
  • Ultra low activepower
    • Typical active current:2mAatf=1MHz
  • For more, see pdf

The CY621472EV30 is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.

]]> Mon, 30 Jul 2012 05:18:53 -0600 CY62167E: 16-Mbit (1 M × 16 / 2 M × 8) Static RAM http://www.cypress.com/?rID=37630 16-Mbit (1 M × 16 / 2 M × 8) Static RAM

Features

  • Configurable as 1 M × 16 or as 2 M × 8 SRAM
  • Very high speed: 45 ns
  • Wide voltage range: 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1.5 μA
    • Maximum standby current: 12 μA
  • Ultra low active power
    • Typical active current: 2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power-down when deselected
  • CMOS for optimum speed and power
  • Offered in 48-pin TSOP I package
     

Functional Description

The CY62167E is a high performance CMOS static RAM organized as 1 M words by 16-bits/2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling.

]]> Mon, 30 Jul 2012 05:14:56 -0600 CY62157EV18: 8-Mbit (512K x 16) Static RAM http://www.cypress.com/?rID=37627 8-Mbit (512K x 16) Static RAM

Features

  • Very high speed: 55 ns
  • Wide voltage range: 1.65V–2.25V
  • Pin Compatible with CY62157DV18 and CY62157DV20
  • Ultra low standby power
    • Typical Standby current: 2 μA
    • Maximum Standby current: 8 μA
  • Ultra low active power
    • Typical active current: 1.8 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power down when deselected
  • CMOS for optimum speed and power
  • Available in Pb-free 48-ball VFBGA package
     

Functional Description

The CY62157EV18 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 05:14:25 -0600 CY62136FV30: 2 Mbit (128K x 16) Static RAM http://www.cypress.com/?rID=37723 2 Mbit (128K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40 °C to 85 °C
    • Automotive-A: –40 °C to 85 °C
    • Automotive-E: –40 °C to 125 °C
  • Wide voltage range: 2.20 V to 3.60 V
  • Pin compatible with CY62136V, CY62136CV30/CV33, and CY62136EV30
  • Ultra low standby power
    • Typical standby current: 1 μA
  • For more, see pdf
     

Functional Description

The CY62136FV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 90 percent when addresses are not toggling.

]]> Mon, 30 Jul 2012 05:13:29 -0600 CY62256VN: 256K (32K x 8) Static RAM http://www.cypress.com/?rID=37635 256K (32K x 8) Static RAM

Features

  • Temperature Ranges
    • Commercial: 0°C to 70°C
    • Industrial: –40°C to 85°C
    • Automotive-A: –40°C to 85°C
    • Automotive-E: –40°C to 125°C
  • Speed: 70 ns
  • Low Voltage Range: 2.7V to 3.6V
  • Low Active Power and Standby Power
  • Easy Memory Expansion with CE and OE Features
  • For more, see pdf
     

Functional Description

The CY62256VN family is composed of two high performance CMOS static RAM’s organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tristate drivers. These devices have an automatic power down feature, reducing the power consumption by over 99% when deselected.

]]> Mon, 30 Jul 2012 05:10:06 -0600 CY62126ESL: 1-Mbit (64K x 16) Static RAM http://www.cypress.com/?rID=37511 1-Mbit (64K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 4 μA
  • Ultra low active power
    • Typical active current: 1.3 mA at f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-Pin thin small outline package (TSOP) II package
     

Functional Description

The CY62126ESL is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 05:03:17 -0600 CY62128E MoBL®: 1-Mbit (128 K × 8) Static RAM http://www.cypress.com/?rID=37607 1-Mbit (128K x 8) Static RAM

Features

  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40°C to 85°C
    • Automotive-A: –40°C to 85°C
    • Automotive-E: –40°C to 125°C
  • Voltage range: 4.5V to 5.5V
  • Pin compatible with CY62128B
  • Ultra low standby power
    • Typical standby current: 1 μA
  • For more, see pdf

Functional Description

The CY62128E is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.

]]> Mon, 30 Jul 2012 05:00:29 -0600 CY62148DV30: 4-Mbit (512K x 8) MoBL® Static RAM http://www.cypress.com/?rID=37622 4-Mbit (512K x 8) MoBL® Static RAM

Features

  • Temperature Ranges
    • Industrial: –40°C to 85°C
    • Automotive-A: –40°C to 85°C
  • Very high speed: 55 ns
    • Wide voltage range: 2.20V – 3.60V
  • Pin-compatible with CY62148CV25, CY62148CV30 and CY62148CV33
  • Ultra low active power
    • Typical active current: 1.5 mA @ f = 1 MHz
    • Typical active current: 8 mA @ f = fmax(55-ns speed)
  • For more, see pdf

Functional Description

The CY62148DV30 is a high-performance CMOS static RAM organized as 512K words by 8 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones.

]]> Mon, 30 Jul 2012 04:59:09 -0600 CY62137FV18 MoBL®: 2-Mbit (128 K × 16) Static RAM http://www.cypress.com/?rID=37612 2-Mbit (128K x 16) Static RAM

Features

  • Very high speed: 55 ns
  • Wide voltage range: 1.65 V – 2.25 V
  • Pin compatible with CY62137CV18
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 5 μA
  • Ultra low active power
    • Typical active current: 1.6 mA @ f = 1 MHz
  • Ultra low standby power
  • For more, see pdf

Functional Description

The CY62137FV18 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 04:55:20 -0600 CY62177ESL MoBL: 32-Mbit (2 M × 16/4 M × 8) Static RAM http://www.cypress.com/?rID=48205 32-Mbit (2 M × 16/4 M × 8) Static RAM

Features
 

  • Thin small outline package-I (TSOP-I) configurable as 2 M x 16 or as 4 M x 8 static RAM (SRAM)
  • High-speed up to 55 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power

Functional Description

The CY62177ESL is a high performance CMOS static RAM organized as 2 M words by 16 bits and 4 M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.

]]> Mon, 30 Jul 2012 04:42:21 -0600 CY62126ESL - Automotive: 1-Mbit (64K x 16) Static RAM http://www.cypress.com/?rID=49139 1-Mbit (64K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 4 μA
  • Ultra low active power
    • Typical active current: 1.3 mA at f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-Pin thin small outline package (TSOP) II package

Functional Description

The CY62126ESL is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 04:00:43 -0600 CY62146EV30 MoBL®: 4-Mbit (256K x 16) Static RAM http://www.cypress.com/?rID=13566 4-Mbit (256K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Temperature ranges
    • Industrial: –40 °C to 85 °C
    • Automotive-A: –40 °C to 85 °C
  • Wide voltage range: 2.20 V to 3.60 V
  • Pin compatible with CY62146DV30
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • For more, see pdf
     

Functional Description

The CY62146EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current. Ultra low active current is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 80 percent when addresses are not toggling.

]]> Mon, 30 Jul 2012 03:48:13 -0600 CY62158E MoBL®: 8-Mbit (1 M × 8) Static RAM http://www.cypress.com/?rID=13565 8-Mbit (1M x 8) Static RAM

Features

  • Very high speed: 45 ns
    • Wide voltage range: 4.5V – 5.5V
  • Ultra low active power
    • Typical active current:1.8 mA at f = 1 MHz
    • Typical active current: 18 mA at f = fmax
  • Ultra low standby power
    • Typical standby current: 2 μA
    • Maximum standby current: 8 μA
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power down when deselected
  • CMOS for optimum speed and power
  • Offered in Pb-free 44-Pin TSOP II package
     

Functional Description

The CY62158E MoBL® is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption.

]]> Mon, 30 Jul 2012 03:47:12 -0600 CY62177EV30: 32 Mbit (2M x 16 / 4M x 8) Static RAM http://www.cypress.com/?rID=39203 32 Mbit (2M x 16 / 4M x 8) Static RAM

Features

  • Thin small outline package (TSOP) I configurable as 2M x 16 or as 4M x 8 static RAM (SRAM)
  • Very high speed
    • 55 ns
  • Wide voltage range
    • 2.2 V to 3.7 V
  • Ultra low standby power
    • Typical standby current: 3 μA
    • Maximum standby current: 25 μA
  • Ultra low active power
  • For more, see pdf

Functional Description

The CY62177EV30 is a high performance CMOS static RAM organized as 2M words by 16 bits and 4M words by 8 bits[1]. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.

]]> Mon, 30 Jul 2012 03:46:55 -0600 CY62167EV18 MoBL®: 16 Mbit (1M x 16) Static RAM http://www.cypress.com/?rID=13562 16 Mbit (1M x 16) Static RAM

Features

  • Very high speed: 55 ns
  • Wide voltage range: 1.65 V to 2.25 V
  • Ultra low standby power
    • Typical standby current: 1.5 μA
    • Maximum standby current: 12 μA
  • Ultra low active power
    • Typical active current: 2.2 mA at f = 1 MHz
  • Easy memory expansion with CE1, CE2, and OE features
  • Automatic power down when deselected
  • CMOS for optimum speed and power
  • Offered in Pb-free 48-ball very fine ball grid array (VFBGA) packages
     

Functional Description

The CY62167EV18 is a high performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH).

]]> Mon, 30 Jul 2012 03:46:02 -0600 CY6264: 8 K × 8 Static RAM http://www.cypress.com/?rID=13598 8K x 8 Static RAM

Features

  • Temperature Ranges
    • Commercial: 0°C to 70°C
    • Industrial: –40°C to 85°C
    • Automotive-A: –40°C to 85°C
  • High Speed
    • 55 ns
  • CMOS for optimum speed/power
  • Easy memory expansion with CE1, CE2 and OE features
  • TTL-compatible inputs and outputs
  • Automatic power-down when deselected
  • Available in Pb-free 28-lead SNC package
     

Functional Description

The CY6264 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state drivers.

]]> Mon, 30 Jul 2012 03:45:09 -0600 CY62157ESL MoBL®: 8-Mbit (512K x 16) Static RAM http://www.cypress.com/?rID=13586 8-Mbit (512K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical Standby current: 2 μA
    • Maximum Standby current: 8 μA
  • Ultra low active power
    • Typical active current: 1.8 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-pin thin small outline package (TSOP) II package
     

Functional Description

The CY62157ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH).

]]> Mon, 30 Jul 2012 03:33:10 -0600 CY62146ESL MoBL®: 4-Mbit (256K x 16) Static RAM http://www.cypress.com/?rID=13585 4-Mbit (256K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical Standby current: 1 μA
    • Maximum Standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-pin thin small outline package (TSOP) II package
     

Functional Description

The CY62146ESL is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 03:31:51 -0600 CY62126EV30: 1-Mbit (64K x 16) Static RAM http://www.cypress.com/?rID=37604 1-Mbit (64K x 16) Static RAM

Features

  • High speed: 45 ns
  • Temperature ranges
    • Industrial: –40 °C to 85 °C
    • Automotive: –40 °C to 125 °C
  • Wide voltage range: 2.2 V to 3.6 V
  • Pin compatible with CY62126DV30
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 4 μA
  • For more, see pdf

Functional Description

The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 03:25:05 -0600 CY62147EV18: 4-Mbit (256K x 16) Static RAM http://www.cypress.com/?rID=37619 4-Mbit (256K x 16) Static RAM

Features

  • Very high speed: 55 ns
  • Wide voltage range: 1.65 V to 2.25 V
  • Pin compatible with CY62147DV18
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Ultra low standby power
  • For more, see pdf

Functional Description

The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH).

]]> Mon, 30 Jul 2012 03:24:29 -0600 CY62136EV30/CY62136EV30LL: 2-Mbit (128K x 16) Static RAM http://www.cypress.com/?rID=37609 2-Mbit (128K x 16) Static RAM

Features
 

  • Very high speed: 45 ns
  • Wide voltage range: 2.20V-3.60V
  • Pin-compatible with CY62136CV30
  • Ultra low standby power
    • Typical standby current: 1μA
    • Maximum standby current: 7μA
  • Ultra-low active power
    • Typical active current: 2 mA @ f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • For more, see pdf
     
Functional Description

The CY62136EV30 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling.      More...
]]> Mon, 30 Jul 2012 03:23:48 -0600 CY62146E: 4-Mbit (256K x 16) Static RAM http://www.cypress.com/?rID=37618 4-Mbit (256K x 16) Static RAM

Features

  • Very high speed: 45 ns
  • Wide voltage range: 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-pin thin small outline package (TSOP) II package

Functional Description

The CY62146E is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected (CE HIGH).

]]> Mon, 30 Jul 2012 03:23:08 -0600 CY62128EV30: 1-Mbit (128 K × 8) Static RAM http://www.cypress.com/?rID=37608 1-Mbit (128 K × 8) Static RAM

Features

  • Very high speed: 45 ns
  • Temperature ranges:
    • Industrial: –40 °C to 85 °C
    • Automotive-A: –40 °C to 85 °C
    • Automotive-E: –40 °C to 125 °C
  • Wide voltage range: 2.2 V to 3.6 V
  • Pin compatible with CY62128DV30
  • Ultra low standby power
    • Typical standby current: 1 μA
  • For more, see pdf

Functional Description

The CY62128EV30 is a high performance CMOS static RAM module organized as 128 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 03:20:17 -0600 CY62148ESL MoBL®: 4-Mbit (512 K × 8) Static RAM http://www.cypress.com/?rID=34483 4-Mbit (512 K × 8) Static RAM

Features

  • Higher speed up to 55 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA
  • Ultra low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power-down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 32-Pin shrunk thin small outline package (STSOP) package
     

Functional Description

The CY62148ESL is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH).

]]> Mon, 30 Jul 2012 00:39:52 -0600 CY62148E MoBL®: 4-Mbit (512 K × 8) Static RAM http://www.cypress.com/?rID=37636 4-Mbit (512 K × 8) Static RAM

Features

  • Very high speed: 45 ns
  • Voltage range: 4.5 V to 5.5 V
  • Pin compatible with CY62148B
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 7 μA (Industrial)
  • Ultra low active power
    • Typical active current: 2.0 mA at f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • For more, see pdf


Functional Description

The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling.

]]> Mon, 30 Jul 2012 00:36:25 -0600 CY621282BN MoBL® Automotive: 1-Mbit (128 K × 8) Static RAM http://www.cypress.com/?rID=50149 1-Mbit (128K x 8) Static RAM

Features

  • Temperature Ranges
    • Automotive-E: –40 °C to 125 °C
  • 4.5 V to 5.5 V operation
  • Complementary metal oxide semiconductor (CMOS) for optimum speed/power
  • Low active power
    • 137.5 mW (max.) (25 mA)
  • Low standby power
    • 137.5 μW (max.) (25 μA)
  • Automatic power-down when deselected
  • TTL-compatible inputs and outputs
  • Easy memory expansion with CE1, CE2, and OE options
  • Available in Pb-free 32-pin (450 mil-wide) small outline integrated circuit (SOIC) package
     

Functional Description

The CY621282BN is a high-performance CMOS static RAM organized as 128K words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), and active LOW Output Enable (OE). This device has an automatic power-down feature that reduces power consumption by more than 75% when deselected.

]]> Fri, 27 Jul 2012 06:45:04 -0600 CY62137FV30 MoBL®: Automotive 2-Mbit (128 K × 16) Static RAM http://www.cypress.com/?rID=48676 Features

  • Very high speed: 45 ns
  • Temperature ranges
    • Automotive-A: –40 °C to 85 °C
    • Automotive-E: –40 °C to 125 °C
  • Wide voltage range: 2.20 V–3.60 V
  • Pin compatible with CY62137CV/CV25/CV30/CV33, CY62137V, and CY62137EV30
  • Ultra low standby power
  • For more, see pdf
     

Functional Description

The CY62137FV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.

]]> Fri, 27 Jul 2012 05:41:54 -0600 Wafer and Die Information Sheet: Memory and Wireless / RF Products http://www.cypress.com/?rID=13819 Memory and Wireless / RF Products

Features

  • Async SRAMs, Dual ports, FIFOs, Micropower SRAMs, PROMs, Sync SRAMs wafer and die, WirelessUSB LP wafer
  • Wafer
    • Standard wafer 25 to 30 mil thick
    • Background wafer to 14 mil thick
    • Background wafer to 11 mil thick
  • Die
    • Die in wafer form 25 to 30 mil thick
    • Background die to 14 mil thick
    • Background die to 11 mil thick
    • Known good die (KGD) levels 1, 2, 3, and 4
  • Temperature ranges
    • Commercial, Industrial, and Automotive
  • Waffle pack packages

Wafer and Die Classification

Cypress’s package products are sold in both wafer and die form. Cypress classifies them as follows:

Wafer

Wafers are probed at room temperature and high temperature to guarantee full functionality. Other parameters are guaranteed based on the level of product that is supplied to the customer. Details of product levels are described later in this document.

Known Good Die (KGD)

KGD is available in both die in wafer form and background die. Product in wafer form is not background and is anywhere from 25 to 30 mil thick. Background die are 14 or 11 mil thick, sawed, and shipped in waffle packs. The product in either form is tested at four different levels.

Level 1

Wafers are probed to guarantee full functionality and all static DC parameters. Other parameters are not guaranteed and warranted, including device reliability.

Level 2

Wafers are probed to guarantee full functionality to all static DC and partial AC parameters. Other parameters are not guaranteed and warranted, including device reliability.

Level 3

Wafers are probed to guarantee full functionality and all static DC and AC parameters. All parameters are guaranteed and warranted, including device reliability.

Wafers and die in wafer form are shipped in jars with die maps. Background die are shipped as die in waffle packs.

Level 4

Wafers are probed to guarantee all static DC parameters. RF testing guidelines and statistical data of packaged parts are provided.

Background die are shipped as die in waffle packs.

]]> Fri, 27 Jul 2012 04:07:21 -0600 QTP 105209: AUTOMOTIVE 28L SNC (300 MILS) NIPDAU, MSL3, 235C REFLOW JCET-CHINA (JT) QUALIFICATION REPORT http://www.cypress.com/?rID=58593 Tue, 17 Jul 2012 05:03:52 -0600 QTP 093104: AUTOMOTIVE 32-LEAD STSOP NIPDAU, MSL3, 260C REFLOW CML-R QUALIFICATION REPORT http://www.cypress.com/?rID=45481 Tue, 17 Jul 2012 05:01:20 -0600 QTP 105211: AUTOMOTIVE 32L STSOP (8X13.4MM) NIPDAU, MSL3, 260C REFLOW JCET-CHINA (JT) QUALIFICATION REPORT http://www.cypress.com/?rID=58602 Tue, 17 Jul 2012 04:54:41 -0600 QTP 111411: AUTOMOTIVE 32L SOIC (450 MILS) NIPDAU, MSL3, 260C REFLOW JCETCHINA (JT) QUALIFICATION REPORT http://www.cypress.com/?rID=62419 Tue, 17 Jul 2012 04:37:48 -0600 QTP 063604: 32-Lead SOIC (450Mils) NiPdAu,MSL3, 260C Reflow CML-R http://www.cypress.com/?rID=35962 Tue, 17 Jul 2012 04:21:47 -0600 QTP 104811: 28/32-LEAD SOJ / 28-LEAD SNC (300 MILS) NIPDAU, MSL3 260C REFLOW JCETCHINA (JT) http://www.cypress.com/?rID=58390 Tue, 17 Jul 2012 03:31:31 -0600 QTP 092605: Automotive 48-Lead TSOP I NiPdAu, MSL3, 260C Reflow OSE-Taiwan (T) http://www.cypress.com/?rID=58465 Tue, 17 Jul 2012 01:58:40 -0600 QTP 072002: 2 Meg MoBL SRAM (CY62136/7FV30), R95LD-3R,Fab4, AEC-Q100 http://www.cypress.com/?rID=36008 Tue, 17 Jul 2012 01:53:15 -0600 QTP 061806: 4Meg MoBL SRAM Automotive Devices, R95LD-3R, Fab4 http://www.cypress.com/?rID=35923 Fri, 13 Jul 2012 06:36:46 -0600 QTP 091302: MoBL Asynchronous SRAM Product Family http://www.cypress.com/?rID=38978 Fri, 13 Jul 2012 06:30:41 -0600 QTP 111904: 32 Meg MoBL SRAM Family R95LD-3R, FAB 4 http://www.cypress.com/?rID=51827 Fri, 13 Jul 2012 00:33:13 -0600 QTP 105208: AUTOMOTIVE 28L SNC (300 MILS) NIPDAU, MSL3, 260C REFLOW JCET-CHINA (JT) QUALIFICATION REPORT http://www.cypress.com/?rID=58595 Thu, 12 Jul 2012 06:56:51 -0600 CY62157EV18-IBIS http://www.cypress.com/?rID=15527 Wed, 30 May 2012 07:29:04 -0600 CY62168DV30 - IBIS http://www.cypress.com/?rID=63146 Tue, 15 May 2012 07:00:02 -0600 CY62127DV30 - IBIS http://www.cypress.com/?rID=63145 Tue, 15 May 2012 06:51:40 -0600 CY62148DV30 - IBIS http://www.cypress.com/?rID=63129 Tue, 15 May 2012 00:58:14 -0600 CY62137FV30 - IBIS http://www.cypress.com/?rID=15563 Tue, 08 May 2012 00:35:16 -0600 CY62138FV30-IBIS http://www.cypress.com/?rID=38979 Wed, 02 May 2012 01:25:06 -0600 QTP 045202: 1 Meg MoBL SRAM Family (CY62xxx) R95LD-3R Technology, Fab4 http://www.cypress.com/?rID=35803 Wed, 25 Apr 2012 06:50:49 -0600 QTP 110902: 32-Lead SOIC (450 mils) Standard and Pb-free NiPdAu, MSL3, 260°C/235°C Reflow JCET-China (JT) http://www.cypress.com/?rID=59929 Wed, 25 Apr 2012 05:43:33 -0600 Why do your address pins not match Samsungs or other vendors? http://www.cypress.com/?rID=26499 The address can be laid out in any order. The address pinout in the case of any sram does not matter since internally you might be addressing different locations but externally you read and write from the same location. Please refer to the following appnote for further clarification. AN1083

]]> Mon, 16 Apr 2012 00:15:06 -0600 AN13842 - Recommended Usage of Byte Enables in Standby Mode for 90 nm x16 MoBL® SRAM Devices http://www.cypress.com/?rID=12875 Recommended usage of Byte enables (BHE and BLE) in standby mode, for the following Cypress 90 nm x16 MoBL® SRAM devices is being discussed in AN13842.

  • 1 Mbit (CY62126EV30)
  • 2 Mbit (CY62136EV30, CY62137EV30, CY62136FV30, CY62137FV30, CY62137FV18)
  • 4 Mbit (CY62146E, CY62146EV30, CY62147EV30, CY62147EV18)
  • 8 Mbit (CY62157E, CY62157EV30, CY62157EV18)
  • 16 Mbit (CY62167E18, CY62167EV30, CY62167E)


The figures below illustrate the trigger condition that could cause an unexpected behavior and the recommended workaround. For a detailed explanation, please refer to the attached application note and contact www.cypress.com/support if you have any questions.

 

                                 Trigger Condition                                                                        Workaround

]]> Tue, 10 Apr 2012 06:37:20 -0600 CY62177DV30 - VHDL http://www.cypress.com/?rID=61697 Mon, 09 Apr 2012 09:01:16 -0600 CY62168DV30 - VHDL http://www.cypress.com/?rID=61696 Mon, 09 Apr 2012 08:59:35 -0600 CY62177ESL_55 - VHDL http://www.cypress.com/?rID=61692 Mon, 09 Apr 2012 08:31:56 -0600 CY621472E30 - VHDL http://www.cypress.com/?rID=61689 Mon, 09 Apr 2012 07:54:59 -0600 CY6264-70 - VHDL http://www.cypress.com/?rID=61664 Mon, 09 Apr 2012 02:12:47 -0600 CY6264-55 - VHDL http://www.cypress.com/?rID=61663 Mon, 09 Apr 2012 02:06:44 -0600 CY62148DV30 - VHDL http://www.cypress.com/?rID=61660 Mon, 09 Apr 2012 01:30:30 -0600 CY62167DV3 - IBIS http://www.cypress.com/?rID=61357 Tue, 03 Apr 2012 01:34:49 -0600 CY62167DV30_70BVI - VHDL http://www.cypress.com/?rID=61279 Mon, 02 Apr 2012 02:18:00 -0600 CY62167DV30_55 - VHDL http://www.cypress.com/?rID=61278 Mon, 02 Apr 2012 02:13:04 -0600 CY62177EV30 - VHDL http://www.cypress.com/?rID=47460 Mon, 02 Apr 2012 02:11:24 -0600 CY62157ESL - VHDL http://www.cypress.com/?rID=60484 Thu, 15 Mar 2012 04:33:27 -0600 CY62136ESL - VHDL http://www.cypress.com/?rID=60463 Wed, 14 Mar 2012 23:53:49 -0600 CY62126ESL - VHDL http://www.cypress.com/?rID=60462 Wed, 14 Mar 2012 23:46:49 -0600 ISB2 vs Temp and ISB2 vs VCC for CY62147EV30 http://www.cypress.com/?rID=26548 Characterization data for CY62147EV30 is attached below

]]> Tue, 13 Mar 2012 06:36:18 -0600 MoBL SRAM Definition http://www.cypress.com/?rID=26545  MoBL stands for More Battery Life. These SRAM's use up to 90% less power than the standard  low-power SRAM's making them the industry's lowest power consumption SRAM's. For example, MoBL SRAMs consume 3 mA at 1.8V in active mode (Icc), and 1 ?A standby power (Isb2). Typically, MoBL SRAM's come with different operating voltage ranges for the same density. They cover voltage ranges of 2.7-3.6, 1.65-1.95, etc. MoBL SRAM's have access times of 70 ns at 2.7 V and 100 ns at 1.8 V over the industrial temperature range. These also offer low data retention voltage (Vdr = 1.0V) for saving power and also to simplify battery interface.

]]> Tue, 13 Mar 2012 06:29:48 -0600 Vss and Vcc clarification http://www.cypress.com/?rID=26542  Vss refers to ground. Vcc is the supply pin.

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