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F-RAM™, nvSRAM, and MRAM Magnetic Field Immunity | Cypress Semiconductor

F-RAM™, nvSRAM, and MRAM Magnetic Field Immunity

Last Updated: 
Jan 18, 2016
Version: 
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This white paper compares the magnetic field immunity of three classes of nonvolatile memory: ferroelectric random-access memory (F-RAM), nonvolatile static random-access memory (nvSRAM), and magnetoresistive random-access memory (MRAM).

Introduction

Nonvolatile random-access memory (NVRAM) is memory that provides fast read and write access to any address and retains data when power is disrupted. Ferroelectric random-access memory (F-RAM™), nonvolatile static random-access memory (nvSRAM), and magnetoresistive random-access memory (MRAM) are three NVRAMs that offer faster random access times than conventional nonvolatile memories, such as flash and EEPROM. Many nonvolatile memory applications are exposed to magnetic fields; therefore, nonvolatile memory components used in these applications must be immune to the magnetic field effect to protect critical system data.