Data Retention Performance of 0.13-μm F-RAM Memory | Cypress Semiconductor
Data Retention Performance of 0.13-μm F-RAM Memory
F-RAM (Ferroelectric Random Access Memory) is a nonvolatile memory that uses a ferroelectric capacitor for storing data. It offers higher write speeds over Flash/EEPROM. This white paper provides a brief overview of data retention performance of F-RAM memory.
|File Title||Language||Size||Last Updated|
|Data Retention Performance of 0.13-μm F-RAM Memory.pdf||English||468.45 KB||08/13/2015|
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