You are here

S29GL01GT 1 Gbit and S29GL512T 512 Mbit Parallel NOR Flash Datasheet | Cypress Semiconductor

S29GL01GT 1 Gbit and S29GL512T 512 Mbit Parallel NOR Flash Datasheet

Last Updated: 
Aug 02, 2016

The Cypress® S29GL01GT/512T are MirrorBit Eclipse flash products fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance, and lower power consumption. Distinctive Characteristics

  • 45 nm MirrorBit Eclipse Technology
  • Single supply (VCC) for read / program / erase (2.7V to 3.6V)
  • Versatile I/O feature – Wide I/O voltage range (VIO): 1.65V to VCC
  • x8/x16 data bus
  • Asynchronous 32-byte Page read
  • 512-byte Programming Buffer – Programming in Page multiples, up to a maximum of 512 bytes
  • Single word and multiple program on same word options
  • Sector Erase – Uniform 128-kbyte sectors
  • Suspend and Resume commands for Program and Erase operations
  • Status Register, Data Polling, and Ready/Busy pin methods to determine device status
  • Advanced Sector Protection (ASP) – Volatile and non-volatile protection methods for each sector
Translated documents are for reference only. We recommend that you refer to the English-language version of a document if you are engaged in development of a design.