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FM25V02A, 256-Kbit (32K x 8) Serial (SPI) F-RAM | Cypress Semiconductor

FM25V02A, 256-Kbit (32K x 8) Serial (SPI) F-RAM

Last Updated: 
Jan 05, 2017
Version: 
*G

256-Kbit (32K × 8) Serial (SPI) F-RAM

Features

  • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
    • High-endurance 100 trillion (1014) read/writes
    • 151-year data retention
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
    • Up to 40-MHz frequency
    • Direct hardware replacement for serial flash and EEPROM
    • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
  • Sophisticated write-protection scheme
    • Hardware protection using the Write Protect (WP) pin
    • Software protection using Write Disable instruction
    • Software block protection for 1/4, 1/2, or entire array
  • Device ID
    • Manufacturer ID and Product ID
  • Low power consumption
    • 2.5-mA active current at 40 MHz
    • 150-μA standby current
    • 8-μA sleep mode current
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40 °C to +85 °C
  • Packages
    • 8-pin small outline integrated circuit (SOIC) package
    • 8-pin thin dual flat no leads (DFN) package
  • Restriction of hazardous substances (RoHS) compliant
  • For more, see pdf.

Functional Overview

The FM25V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

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