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FM24V02A, 256-Kbit (32K × 8) Serial (I2C) F-RAM Datasheet | Cypress Semiconductor

FM24V02A, 256-Kbit (32K × 8) Serial (I2C) F-RAM Datasheet

Last Updated: 
Oct 03, 2016

256-Kbit (32K × 8) Serial (I2C) F-RAM


  • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
    • High-endurance 100 trillion (1014) read/writes
    • 151-year data retention
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Fast two-wire serial interface (I2C)
    • Up to 3.4-MHz frequency
    • Direct hardware replacement for serial EEPROM
    • Supports legacy timings for 100 kHz and 400 kHz
  • Device ID
    • Manufacturer ID and Product ID
  • Low power consumption
    • 175-μA active current at 100 kHz
    • 150-μA standby current
    • 8-μA sleep mode current
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40 °C to +85° C
  • 8-pin small outline integrated circuit (SOIC) package
  • Restriction of hazardous substances (RoHS) compliant
  • For more, see pdf.

Functional Overview

The FM24V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.