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FM23MLD16, 8-MBIT (512KX16) F-RAM MEMORY | Cypress Semiconductor

FM23MLD16, 8-MBIT (512KX16) F-RAM MEMORY

Last Updated: 
Oct 22, 2015
Version: 
*C

Features

8Mbit Ferroelectric Nonvolatile RAM
 

  • Organized as 512Kx16
  • Configurable as 1Mx8 Using /UB, /LB
  • High Endurance 100 Trillion (1014) Read/Writes
  • NoDelay™ Writes
  • Page Mode Operation to 33MHz
  • Advanced High-Reliability Ferroelectric Process
  • For more, see pdf.

Description

The FM23MLD16 is a 512Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns,  functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory.